Effect of carrier gas on metal-organic chemical vapour deposition of aluminium from dimethylethylamine alane

被引：11

作者：

Yun, JH ^{[1
]}

Rhee, SW ^{[1
]}

机构：

[1] Pohang Univ Sci & Technol, Dept Chem Engn, Lab Adv Mat Proc, Pohang 790784, South Korea

来源：

JOURNAL OF MATERIALS SCIENCE-MATERIALS IN ELECTRONICS | 1998年 / 9卷 / 01期

关键词：

D O I：

10.1023/A:1008888528741

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

The effect of carrier gas, such as H-2, He, and Ar, on the deposition rate, film morphology, resistivity, and chemical composition of Al thin film from dimethylethylamine alane (DMEAA) was investigated. The deposition rate was highest in H-2 carrier gas and lowest in Ar, when the substrate temperature is above 150 degrees C. The surface morphology of the film deposited in He carrier gas was rough and particles from gas phase reaction, were also observed on the film surface. The film deposited in He carrier gas had a higher resistivity than the films deposited in H-2 or Ar at the higher substrate temperature due to oxygen impurity incorporated in the film. (C) 1998 Chapman & Hall.

引用

页码：1 / 4

页数：4

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