Surface conduction on poled BaTiO3 single crystals in ultra high vacuum

被引:10
作者
Urakami, Yosuke [1 ]
Yamato, Mizuki [1 ]
Watanabe, Yukio [1 ]
机构
[1] Kyushu Univ, Fukuoka 8128581, Japan
关键词
surface; surface layer; conduction; phase transition; polarization;
D O I
10.1080/00150190601180158
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
We report the experimental verifications that the clean free surface of ferroelectric has an intrinsic electron/hole layer, which exists below the ferroelectric phase-transition temperature, by measuring the surface conduction of BaTiO3 single crystals in ultra high vacuum. To our knowledge, the electrically controlled formation of both electron and hole surface conduction layer that are nonvolatile is demonstrated for the first time. The existence of the intrinsic surface electron/hole layer is also a proof that the ferroelectric polarization reaches the top surface, which has important implication in nano-ferroelectrics.
引用
收藏
页码:32 / 36
页数:5
相关论文
共 9 条
[1]  
DANNIELS J, 1976, PHILIPS RES REP, V31, P489
[2]   Proposal for a new ferroelectric gate field effect transistor memory based on ferroelectric-insulator interface conduction [J].
Hirooka, G ;
Noda, M ;
Okuyama, M .
JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS, 2004, 43 (4B) :2190-2193
[3]   Nonlinear positive temperature coefficient of resistance of BaTiO3 film [J].
Okano, M ;
Watanabe, Y ;
Cheong, SW .
APPLIED PHYSICS LETTERS, 2003, 82 (12) :1923-1925
[4]   Defects and charge transport in perovskite ferroelectrics [J].
Raymond, MV ;
Smyth, DM .
JOURNAL OF PHYSICS AND CHEMISTRY OF SOLIDS, 1996, 57 (10) :1507-1511
[5]  
VUL BM, 1970, SOV PHYS SEMICOND+, V4, P128
[6]   EPITAXIAL ALL-PEROVSKITE FERROELECTRIC FIELD-EFFECT TRANSISTOR WITH A MEMORY RETENTION [J].
WATANABE, Y .
APPLIED PHYSICS LETTERS, 1995, 66 (14) :1770-1772
[7]   Theoretical stability of the polarization in a thin semiconducting ferroelectric [J].
Watanabe, Y .
PHYSICAL REVIEW B, 1998, 57 (02) :789-804
[8]   Surface conduction on insulating BaTiO3 crystal suggesting an intrinsic surface electron layer [J].
Watanabe, Y ;
Okano, M ;
Masuda, A .
PHYSICAL REVIEW LETTERS, 2001, 86 (02) :332-335
[9]  
Yamamoto K, 2005, EPILEPSIA, V46, P201