On Sombor indices of line graph of silicate carbide Si2C3-I[p,q]

被引：24

作者：

Asif, Fatima ^{[1
]}

Zahid, Zohaib ^{[1
]}

Husin, Mohamad Nazri ^{[2
]}

Cancan, Murat ^{[3
]}

Tas, Ziyattin ^{[4
]}

Alaeiyan, Mehdi ^{[5
]}

Farahani, Moahmmad Reza ^{[5
]}

机构：

[1] Univ Management & Technol, Dept Math, Lahore, Pakistan

[2] Univ Malaysia Terengganu, Fac Ocean Engn Technol & Informat, Special Interest Grp Modelling & Data Analyt SIGM, Terengganu 21030, Malaysia

[3] Van Yuzuncu Yil Univ, Fac Educ, Zeve Campus, TR-65080 Tusba, Van, Turkey

[4] Bingol Univ, Dept Math, Bingol, Turkey

[5] Iran Univ Sci & Technol IUST, Dept Math, Tehran 16844, Iran

来源：

JOURNAL OF DISCRETE MATHEMATICAL SCIENCES & CRYPTOGRAPHY | 2022年 / 25卷 / 01期

关键词：

Topological index; Sombor index; Line graph; Silicate carbide Si2C3-I[p; q; TOPOLOGICAL INDEXES; LEAP INDEXES; ZAGREB INDEX;

D O I：

10.1080/09720510.2022.2043621

中图分类号：

O29 [应用数学];

学科分类号：

070104 ;

摘要：

Topological indices are numerical parameters associated with underlying topology of a molecular structure. They are correlated with several physio-chemical properties of chemical compounds. Recently, Euclidean metric based topological index has been introduced named as Sombor index. Therefore, in this article, we will discuss combinatorial aspects and compute Sombor index, average Sombor index and the reduced Sombor index of line graph of silicate carbides Si2C3-I[p, q].

引用

页码：301 / 310

页数：10

共 5 条

[1] Banhatti, revan and hyper-indices of silicon carbide Si2C3-III[n,m]
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[3] On Ve-Degree and Ev-Degree Based Topological Properties of Silicon Carbide Si2C3-II[p,q]
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