Operational Characteristics of SiC Diodes as Ionizing Radiation Detectors

被引：0

作者：

De Napoli, M. ^{[1
,2
]}

Giacoppo, F. ^{[2
,3
]}

Raciti, G. ^{[1
,2
]}

Rapisarda, E. ^{[1
,2
]}

Sfienti, C. ^{[1
,2
]}

机构：

[1] Univ Catania, Dipartimento Fis & Astron, Via S Sofia 64, I-95123 Catania, Italy

[2] INFN, Lab Nazl Sud, I-95123 Catania, Italy

[3] Univ Messina, Dipartimento Fis, I-98166 Messina, Italy

来源：

INTERNATIONAL CONFERENCE ON APPLICATIONS OF NUCLEAR TECHNIQUES | 2009年 / 1194卷

关键词：

SiC-Silicon Carbide; Semiconductors; Radiation Detectors; SILICON-CARBIDE DETECTORS; INDUCED CHARGE COLLECTION; 4H-SIC SCHOTTKY DIODES; PARTICLE DETECTORS; LIGHT-IONS; GAMMA-RAYS; SEMICONDUCTOR-DETECTORS; PERFORMANCE; TOLERANCE; ELECTRONS;

D O I：

10.1063/1.3275655

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

In order to explore the possibility of using SiC detectors in nuclear physics applications in extreme environments, the operational characteristics of 4H-SiC Schottky diodes with different dopant concentrations have been studied with C-12 and O-16 ions at various incident energies. The detector response has been investigated in term of linearity, energy resolution, signal rise-time and Charge Collection Efficiency as a function of the applied reverse bias and of the dopant concentration. Moreover, since one of the most promising properties of SiC detectors is their radiation hardness, the radiation damage, produced by irradiating SiC diodes with O-16 ions at 35.2 MeV, has been evaluated by measuring the degradation of both the signal pulse-height and the energy resolution as a function of the O-16 fluence.

引用

页码：130 / +

页数：3

共 42 条

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