Highly efficient solution-processed phosphorescent organic light-emitting devices with double-stacked hole injection layers

被引：16

作者：

Chen, Yuehua ^{[1
,2
]}

Hao, Lin ^{[1
,2
]}

Zhang, Xinwen ^{[1
,2
]}

Zhang, Xiaolin ^{[1
,2
]}

Liu, Mengjiao ^{[1
,2
]}

Zhang, Mengke ^{[1
,2
]}

Wang, Jiong ^{[1
,2
]}

Lai, Wen-Yong ^{[1
,2
]}

Huang, Wei ^{[1
,2
,3
,4
]}

机构：

[1] Nanjing Univ Posts & Telecommun, Key Lab Organ Elect & Informat Displays, 9 Wenyuan Rd, Nanjing 210023, Jiangsu, Peoples R China

[2] Nanjing Univ Posts & Telecommun, IAM, Jiangsu Natl Synerget Innovat Ctr Adv Mat SICAM, 9 Wenyuan Rd, Nanjing 210023, Jiangsu, Peoples R China

[3] Nanjing Tech Univ, KLOFE, 30 South Puzhu Rd, Nanjing 211816, Jiangsu, Peoples R China

[4] Nanjing Tech Univ, IAM, Jiangsu Natl Synerget Innovat Ctr Adv Mat SICAM, 30 South Puzhu Rd, Nanjing 211816, Jiangsu, Peoples R China

来源：

JOURNAL OF APPLIED PHYSICS | 2017年 / 122卷 / 06期

关键词：

TRANSPORT LAYERS; SOLAR-CELLS; ELECTROLUMINESCENT DEVICES; OPTOELECTRONIC DEVICES; DELAYED FLUORESCENCE; SMALL-MOLECULE; HOST MATERIALS; DIODES; OXIDE; PERFORMANCE;

D O I：

10.1063/1.4998449

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

In this paper, solution-processed nickel oxide (NiOx) is used as hole-injection layers (HILs) in solution-processed phosphorescent organic light-emitting diodes (PhOLEDs). Serious exciton quenching is verified at the NiOx/emitting layer (EML) interface, resulting in worse device performance. The device performance is significantly improved by inserting a layer of poly(3,4-ethylenedioxythiophene):poly(styrenesulfonic acid) (PEDOT:PSS) between the EML and NiOx. The solution-processed blue PhOLED with the double-stacked NiOx/PEDOT:PSS HILs shows a maximum current efficiency of 30.5 cd/A, which is 75% and 30% higher than those of the devices with a single NiOx HIL and a PEDOT:PSS HIL, respectively. Improvement of device efficiency can be attributed to reducing exciton quenching of the PEDOT: PSS layer as well as the electron blocking effect of the NiOx layer. Published by AIP Publishing.

引用

页数：7

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