GaN-Based Power Flip-Chip LEDs With an Internal ESD Protection Diode on Cu Sub-Mount

被引：11

作者：

Sun, Y. X. ^{[1
]}

Chen, W. S. ^{[2
,3
]}

Hung, S. C. ^{[4
]}

Lam, K. T. ^{[5
]}

Liu, C. H. ^{[6
]}

Chang, Shoou-Jinn ^{[2
,3
]}

机构：

[1] China Univ Petr, Dept Mat Sci & Engn, Dongying 257061, Shandong, Peoples R China

[2] Natl Cheng Kung Univ, Dept Elect Engn, Adv Optoelect Technol Ctr, Ctr Micro Nano Sci & Technol, Tainan 70101, Taiwan

[3] Natl Cheng Kung Univ, Inst Microelect, Tainan 70101, Taiwan

[4] Shih Chien Univ, Dept Informat Technol & Commun, Kaohsiung 845, Taiwan

[5] Leader Univ, Dept Informat Commun, Tainan 70970, Taiwan

[6] Nan Jeon Inst Technol, Dept Elect Engn, Tainan 73746, Taiwan

来源：

IEEE TRANSACTIONS ON ADVANCED PACKAGING | 2010年 / 33卷 / 02期

关键词：

Electrostatic discharge (ESD); flip-chip; GaN; internal protection diode; light emitting diode (LED); NITRIDE-BASED LEDS; INGAN-GAN; VOLTAGE; BLUE;

D O I：

10.1109/TADVP.2009.2037806

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

The authors demonstrate the fabrication of 1 mm 1 mm GaN-based power flip-chip light-emitting diodes (LEDs) with an internal electrostatic discharge (ESD) protection diode on Cu sub-mount. With the internal diode, it was found that forward voltage of the LED increased from 3.22 to 3.38 V while output power decreased from 366.5 to 273.9 mW when under 350 mA current injection due to the reduced light emitting area. It was also found that we can achieve a significantly better ESD robustness by building the internal diode inside the LED chip. Furthermore, It was found that 90% of the LEDs with internal diode survived with an applied reverse ESD surge of 12000 V and 25% of the LEDs can even endure 20000 V reverse ESD stressing.

引用

页码：433 / 437

页数：5

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