Electrical and Structural Analysis of Crystal Defects After High-Temperature Rapid Thermal Annealing of Highly Boron Ion-Implanted Emitters

被引：13

作者：

Kruegener, Jan ^{[1
]}

Peibst, Robby ^{[2
]}

Wolf, F. Alexander ^{[3
]}

Bugiel, Eberhard ^{[1
]}

Ohrdes, Tobias ^{[2
]}

Kiefer, Fabian ^{[2
]}

Schoellhorn, Claus ^{[4
]}

Grohe, Andreas ^{[4
]}

Brendel, Rolf ^{[5
,6
]}

Osten, H. Joerg ^{[1
,6
]}

机构：

[1] Leibniz Univ Hannover, Inst Elect Mat & Devices, D-30167 Hannover, Germany

[2] Inst Solar Energy Res Hamelin, D-31860 Emmerthal, Germany

[3] BOSCH Corp Res, D-70839 Gerlingen, Germany

[4] Bosch Solar Energy, D-99310 Arnstadt, Germany

[5] Solar Energy Res Inst, Hamelin, Germany

[6] Leibniz Univ Hannover, Lab Nano & Quantum Engn, D-30167 Hannover, Germany

来源：

IEEE JOURNAL OF PHOTOVOLTAICS | 2015年 / 5卷 / 01期

关键词：

Boron; crystal defects; ion implantation; photovoltaic; rapid thermal annealing (RTA); silicon; DISLOCATION LOOPS; CLUSTERS;

D O I：

10.1109/JPHOTOV.2014.2365468

中图分类号：

TE [石油、天然气工业]; TK [能源与动力工程];

学科分类号：

0807 ; 0820 ;

摘要：

Ion implantation of boron is a promising technique for the preparation of p-type emitters in n-type cells. We use rapid thermal annealing with temperatures up to 1250 degrees C and annealing durations between 6 s and 20 min to anneal the implant-induced crystal defects. Experimental J(0e) is compared with simulated and measured defect densities. Perfect dislocation loops are identified to be the dominating defect species after rapid thermal annealing (RTA) above 1000 degrees C. Even for emitters with J(0e) values around 40 fA/cm(2), defects are present within the valleys of the textured surfaces after annealing. On textured Al2O3-passivated boron emitters, we measure J(0e) of 38 fA/cm(2) for a sheet resistance around 80 Omega/square after very short annealing processes (1 min at 1200 degrees C).

引用

页码：166 / 173

页数：8

共 33 条

[1] [Anonymous], P 37 IEEE PHOT SPEC
[2] [Anonymous], 2012, SENT PROC US GUID VE
[3] [Anonymous], 2012, SENT DEV US GUID VER
[4] Avci I., 2002, THESIS U FLORIDA GAI
[5] Effect of boron concentration on recombination at the p-Si-Al2O3 interface
Black, Lachlan E.
Allen, Thomas
McIntosh, Keith R.
Cuevas, Andres
[J]. JOURNAL OF APPLIED PHYSICS, 2014, 115 (09)
[6] Fully Ion Implanted and Coactivated Industrial n-Type Cells With 20.5% Efficiency
Boescke, T. S.
Kania, D.
Schoellhorn, C.
Stichtenoth, D.
Helbig, A.
Sadler, P.
Braun, M.
Dupke, M.
Weiss, M.
Grohe, A.
Lossen, J.
Krokoszinski, H. -J.
[J]. IEEE JOURNAL OF PHOTOVOLTAICS, 2014, 4 (01): : 48 - 51
[7] Ostwald ripening of end-of-range defects in silicon
Bonafos, C
Mathiot, D
Claverie, A
[J]. JOURNAL OF APPLIED PHYSICS, 1998, 83 (06) : 3008 - 3017
[8] Evolution of boron-interstitial clusters in crystalline Si studied by transmission electron microscopy
Boninelli, S.
Mirabella, S.
Bruno, E.
Priolo, F.
Cristiano, F.
Claverie, A.
De Salvador, D.
Bisognin, G.
Napolitani, E.
[J]. APPLIED PHYSICS LETTERS, 2007, 91 (03)
[9] Fundamental boron-oxygen-related carrier lifetime limit in mono- and multicrystalline silicon
Bothe, K
Sinton, R
Schmidt, J
[J]. PROGRESS IN PHOTOVOLTAICS, 2005, 13 (04): : 287 - 296
[10] Three-dimensional atomic-scale imaging of boron clusters in implanted silicon
Cojocaru-Miredin, O.
Cadel, E.
Vurpillot, F.
Mangelinck, D.
Blavette, D.
[J]. SCRIPTA MATERIALIA, 2009, 60 (05) : 285 - 288

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