6H-SiC Schottky diode edge terminated using amorphous SiC by sputtering method

被引：4

作者：

Matsumoto, K ^{[1
]}

Chen, Y ^{[1
]}

Kuzmik, J ^{[1
]}

Nishino, S ^{[1
]}

机构：

[1] Kyoto Inst Technol, Fac Engn & Design, Dept Elect & Informat Sci, Sakyo Ku, Kyoto 606, Japan

来源：

SILICON CARBIDE, III-NITRIDES AND RELATED MATERIALS, PTS 1 AND 2 | 1998年 / 264-2卷

关键词：

edge termination; Schottky; reactive ion etching; sputtering;

D O I：

10.4028/www.scientific.net/MSF.264-268.925

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

In this paper, we describe the experimental methods and the results on the evaluation of the Schottky barrier which is formed by vacuum-evaporation aluminum on chemically etched n-type 6H-SiC. And we report the effects of edge termination of amorphous SiC using Reactive Ion Etching (RIE) and sputtering method. Edge termination was done by amorphous SiC in the trench etched by RIE using CF4 and O-2. Amorphous SiC was formed by sputtering poly-SiC. Schottky barrier diodes have higher breakdown voltage at 300 V and lower leakage current than those without the edge termination.

引用

页码：925 / 928

页数：4