Tunneling of holes observed at work function measurements of metal/HfO2/SiO2/n-Si gate stacks

被引：7

作者：

Rothschild, J. A. ^{[1
]}

Avraham, H. ^{[1
]}

Lipp, E. ^{[1
]}

Eizenberg, M. ^{[1
]}

机构：

[1] Technion Israel Inst Technol, Dept Mat Engn, IL-32000 Haifa, Israel

来源：

APPLIED PHYSICS LETTERS | 2010年 / 96卷 / 12期

关键词：

defect states; dielectric materials; elemental semiconductors; hafnium compounds; high-k dielectric thin films; MOS capacitors; silicon; silicon compounds; tunnelling; valence bands; work function; BARRIER HEIGHTS; BAND ALIGNMENT; HIGH-KAPPA; DIELECTRICS; CURRENTS; OXIDE; HFO2; EXTRACTION; SI;

D O I：

10.1063/1.3360879

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

The voltage bias that causes a transition from direct tunneling to Fowler-Nordheim tunneling in the current-voltage characteristic of a metal/HfO2/SiO2/n-Si capacitor was measured. The transition occurs in the negative gate voltage regime and can be attributed to conduction of electrons from the metal through a defect level in the HfO2 or to conduction of holes from the Si through the valence band of the HfO2. The dependence of the determined barrier height on the gate-metal work function indicates the validity of the latter model.

引用

页数：3

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