ON QUANTUM HYDRODYNAMIC MODELS FOR ELECTRONIC TRANSPORT IN NANOSCALE SEMICONDUCTOR DEVICES

被引：1
|
作者：
Tulcan-Paulescu, Eugenia [1 ]
Comanescu, Dan [2 ]
Paulescu, Marius [1 ]
机构：
[1] W Univ Timisoara, Dept Phys, Timisoara 300223, Romania
[2] W Univ Timisoara, Dept Math, Timisoara 300223, Romania
来源：
MODERN PHYSICS LETTERS B | 2010年 / 24卷 / 4-5期
关键词：
Quantum hydrodynamics; Bohm potential; finite differences; ballistic diode; resonant tunneling diode;
D O I：
10.1142/S0217984910022470
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
This article deals with quantum hydrodynamic models (QHD) for electronic transport in semiconductor devices. Numerical simulation of ballistic diode and resonant tunneling diode is discussed. Based on overall results, it can be concluded that the considered QHD models have remarkable abilities to express the refinements of electronic transport in nanodevices.
引用
收藏
页码：401 / 409
页数：9
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