Structural and optical properties of InAs/InAsSb superlattices grown by metal organic chemical vapor deposition for mid-wavelength infrared photodetectors

被引：7

作者：

Ning, Zhen-Dong ^{[1
]}

Liu, Shu-Man ^{[2
]}

Luo, Shuai ^{[2
]}

Ren, Fei ^{[2
]}

Wang, Feng-Jiao ^{[2
]}

Yang, Tao ^{[2
]}

Liu, Feng-Qi ^{[2
]}

Wang, Zhan-Guo ^{[1
,2
]}

Zhao, Lian-Cheng ^{[1
]}

机构：

[1] Harbin Inst Technol, Sch Mat Sci & Engn, Harbin 150001, Peoples R China

[2] Chinese Acad Sci, Inst Semicond, Key Lab Semicond Mat Sci, Beijing 100083, Peoples R China

来源：

APPLIED SURFACE SCIENCE | 2016年 / 368卷

基金：

中国国家自然科学基金;

关键词：

Superlatt ice; MOCVD; Mid-infrared; Temperature-dependent; Photoluminescence; INAS;

D O I：

10.1016/j.apsusc.2016.01.255

中图分类号：

O64 [物理化学（理论化学）、化学物理学];

学科分类号：

070304 ; 081704 ;

摘要：

InAs/InAsSb superlattices were grown on (001) GaSb substrates by metal organic chemical vapor deposition for potential applications as mid-infrared optoelectronic devices. X-ray diffraction, transmission electron microscopy, photoluminescence emission and spectral photoconductivity were used to characterize the grown structures. Generally, photoluminescence emission measurements of InAs/InAsSb superlattices were performed over the temperature range from 11 K to 300 K. The Varshni and Bose-Einstein parameters were determined. Low-temperature photoluminescence measurements showed peaks at 3-5 mu m, while photoconductance results showed strong spectral response up to room temperature, when the photoresponse onset was extended to 5.5 mu m. The photoluminescence emission band covers the CO2 absorption peak making it suitable for application in CO2 detection. (C) 2016 Elsevier B.V. All rights reserved.

引用

页码：110 / 113

页数：4

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