Resistivity plateau and large magnetoresistance in the charge density wave system TaTe4

被引：15

作者：

Luo, X. ^{[1
]}

Chen, F. C. ^{[1
,2
]}

Pei, Q. L. ^{[1
]}

Gao, J. J. ^{[1
,2
]}

Yan, J. ^{[1
,2
]}

Lu, W. J. ^{[1
]}

Tong, P. ^{[1
]}

Han, Y. Y. ^{[3
]}

Song, W. H. ^{[1
]}

Sun, Y. P. ^{[1
,3
,4
]}

机构：

[1] Chinese Acad Sci, Key Lab Mat Phys, Inst Solid State Phys, Hefei 230031, Peoples R China

[2] Univ Sci & Technol China, Hefei 230026, Peoples R China

[3] Chinese Acad Sci, High Field Magnet Lab, Hefei 230031, Peoples R China

[4] Nanjing Univ, Collaborat Innovat Ctr Adv Microstruct, Nanjing 210093, Jiangsu, Peoples R China

来源：

APPLIED PHYSICS LETTERS | 2017年 / 110卷 / 09期

基金：

中国国家自然科学基金;

关键词：

GIANT MAGNETORESISTANCE; ULTRAHIGH MOBILITY;

D O I：

10.1063/1.4977708

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Due to the time reversal symmetry, the metallic surface of the topological insulator (TI) survives and results in the resistivity plateau at low temperature, which is the transport signature of the metallic surface state. Such a universal character has been observed in many materials, such as Bi2Te2Se, SmB6, and so on. Recently, a similar behavior has also been found in the possible topological semimetal LaSb/Bi and the metallic compounds Nb/TaAs2. Herein, we have mainly explored the resistivity plateau and the magnetoresistance (MR) of TaTe4 single crystal with the charge density wave (CDW) transition temperature T-CDW = 475 K. There are some interesting observations: (i) The large MR (MR is about 1200% in a magnetic field 16 T at T = 2K) is observed at low temperature; (ii) A field-induced universal TI resistivity with a plateau at roughly T = 10K and high quantum mobility of carriers in the plateau region are present; (iii) Quantum oscillations with the angle dependence of a two-dimensional Fermi surface are shown. Owing to the CDW character that existed in TaTe4, it represents an ideal system to investigate the relationship between the CDW and the topological physics. Published by AIP Publishing.

引用

页数：5

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