Static and dynamic behavior of the SiC complementary JBS structures

被引：0

作者：

Kurel, Raido ^{[1
]}

Rang, Toomas ^{[1
]}

机构：

[1] Tallinn Univ Technol, Dept Elect, EE-200108 Tallinn, Estonia

来源：

2006 INTERNATIONAL BALTIC ELECTRONICS CONFERENCE, PROCEEDINGS | 2006年

关键词：

D O I：

暂无

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

This paper presents results of simulation of SiC based complementary JBS devices. The inner processes of JBS have been investigated to get better understanding of the main parameters inside the JBS device, which have most important influence on electrical characteristics of the device and which can not be measured by traditional techniques. The best complementary solutions of JBS devices for power application are found in means of device crystal polytype (4H- versus 6H-SiC), and of Schottky contact metal work function values.

引用

页码：59 / +

页数：2