Theoretical optimization of GaInP/GaAs dual-junction solar cell: Toward a 36% efficiency at 1000 suns

被引：12

作者：

Baudrit, Mathieu ^{[1
]}

Algora, Carlos ^{[1
]}

机构：

[1] Univ Politecn Madrid, Inst Energia Solar, E-28040 Madrid, Spain

来源：

PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE | 2010年 / 207卷 / 02期

关键词：

D O I：

10.1002/pssa.200925210

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

A theoretical conversion efficiency of 36.4% at 1000 suns concentration has been determined by means of realistic models and an improved optimization routine. The starting point device was the recent world-record monolithic GaInP/GaAs dual-junction solar cell that was grown lattice matched on a GaAs substrate by MOVPE, which has an efficiency of 32.6% at 1000 suns. Using previously calibrated models developed at our institution, IES-UPM, together with Silvaco ATLAS TCAD software, we reproduced the characteristics of the world-record solar cell, and then determined a cell configuration that would yield greater efficiency by using an optimization routine to hone the doping concentration and the thickness of each layer. (C) 2010 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim

引用

页码：474 / 478

页数：5

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