Electron paramagnetic resonance and optical absorption study of acceptors in CdSiP2 crystals

被引:5
作者
Scherrer, E. M. [1 ]
Halliburton, L. E. [2 ,3 ]
Golden, E. M. [1 ]
Zawilski, K. T. [4 ]
Schunemann, P. G. [4 ]
Hopkins, F. K. [5 ]
Averett, K. L. [5 ]
Giles, N. C. [1 ]
机构
[1] Air Force Inst Technol, Dept Engn Phys, Wright Patterson AFB, OH 45433 USA
[2] West Virginia Univ, Dept Phys & Astron, Morgantown, WV 26506 USA
[3] Azimuth Corp, 4027 Colonel Glenn Highway,Suite 230, Beavercreek, OH 45431 USA
[4] BAE Syst, Nashua, NH 03061 USA
[5] Air Force Res Lab, Mat & Mfg Directorate, Wright Patterson AFB, OH 45433 USA
关键词
NUCLEAR DOUBLE-RESONANCE; PARAMETRIC OSCILLATOR; INTRINSIC DEFECTS; MU-M; EPR; CONVERSION; VACANCY; POWER;
D O I
10.1063/1.5041806
中图分类号
TB3 [工程材料学];
学科分类号
0805 ; 080502 ;
摘要
Cadmium silicon diphosphide (CdSiP2) is a nonlinear material often used in optical parametric oscillators (OPOs) to produce tunable laser output in the mid-infrared. Absorption bands associated with donors and acceptors may overlap the pump wavelength and adversely affect the performance of these OPOs. In the present investigation, electron paramagnetic resonance (EPR) is used to identify two unintentionally present acceptors in large CdSiP2 crystals. These are an intrinsic silicon-on-phosphorus anti-site and a copper impurity substituting for cadmium. When exposed to 633 nm laser light at temperatures near or below 80 K, they convert to their neutral paramagnetic charge states (Si-p(0) and Cu-Cd(0)) and can be monitored with EPR. The corresponding donor serving as the electron trap is the silicon-on-cadmium antisite (Si-Cd(2+) before illumination and Si-Cd(2+) after illumination). Removing the 633 nm light and warming the crystal above 90 K quickly destroys the EPR signals from both acceptors and the associated donor. Broad optical absorption bands peaking near 0.8 and 1.4 mu m are also produced at low temperature by the 633 nm light. These absorption bands are associated with the Si-p(0) and Cu-Cd(0) acceptors. (C) 2018 Author(s).
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页数:10
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