Photocatalytic activity of Al/Ni doped TiO2 films synthesized by sol-gel method: Dependence on thickness and crystal growth of photocatalysts

被引：36

作者：

Temam, Elhachmi Guettaf ^{[1
]}

Djani, Faisal ^{[2
]}

Rahmane, Saad ^{[1
]}

Ben Temam, Hachemi ^{[1
]}

Gasmi, Brahim ^{[1
]}

机构：

[1] Biskra Univ, Phys Lab Thin Layers & Applicat, BP 145 RP, Biskra 07000, Algeria

[2] Univ Mohamed Khider, Mol Chem Lab & Environm, Biskra 07000, Algeria

来源：

SURFACES AND INTERFACES | 2022年 / 31卷

关键词：

Al; Ni doped TiO2; Thin films; Sol gel; Methylene blue; Photocatalysis; Sunlight; THIN-FILMS; AIR-TEMPERATURE; TEXTILE WASTE; DEGRADATION; RADIATION; ANATASE; SCALE; WATER; ROUGHNESS; OXIDATION;

D O I：

10.1016/j.surfin.2022.102077

中图分类号：

O64 [物理化学（理论化学）、化学物理学];

学科分类号：

070304 ; 081704 ;

摘要：

Al and Ni doped TiO2 thin films were prepared via sol-gel dip-coating method. The effect of the photocatalysis process on the properties of TiO2 based thin films was investigated. The TiO2 based films were annealed at 450 degrees C. XRD results show that un-doped TiO2 films were grown with anatase phase, whereas, the Ni and Ni/Al doped TiO2 films show anorthic structure of Ti4O7 single phase. The presence of Al preferred the rutile phase. No phases related to NiO or Al2O3 were detected. Ni/TiO2 photocatalyst shows high photocatalytic activity (~93%) of Methylene blue (MB) breakdown thanks to the high content of O and Ti, wide band gap (3.35 eV), low crystalline size (6.87 nm), high film thickness (288 nm), and high surface roughness (44.5 nm). After photocatalysis, all the films show a decrease in O content and thickness, whereas the indirect band gap values were increased which suggests the reuse with low photocatalytic activity.

引用

页数：10

共 49 条

[1] Optoelectronic properties of SnO2 thin films sprayed at different deposition times [J].