In Situ Observation of Reversible Nanomagnetic Switching Induced by Electric Fields

被引：135

作者：

Brintlinger, Todd ^{[1
,2
]}

Lim, Sung-Hwan ^{[1
]}

Baloch, Kamal H. ^{[1
,3
]}

Alexander, Paris ^{[1
]}

Qi, Yi ^{[1
]}

Barry, John ^{[4
]}

Melngailis, John ^{[4
]}

Salamanca-Riba, Lourdes ^{[1
]}

Takeuchi, I. ^{[1
]}

Cumings, John ^{[1
]}

机构：

[1] Univ Maryland, Dept Mat Sci & Engn, College Pk, MD 20742 USA

[2] USN, Res Lab, Washington, DC 20375 USA

[3] Univ Maryland, Inst Phys Sci & Technol, College Pk, MD 20742 USA

[4] Univ Maryland, Dept Elect & Comp Engn, College Pk, MD 20742 USA

来源：

NANO LETTERS | 2010年 / 10卷 / 04期

关键词：

Multiferroic; magnetoelectric; domain wall; Lorentz; in situ; MEMORY; FILMS;

D O I：

10.1021/nl9036406

中图分类号：

O6 [化学];

学科分类号：

0703 ;

摘要：

We report direct observation of controlled and reversible switching of magnetic domains using static (dc) electric fields applied in situ during Lorentz microscopy. The switching is realized through electromechanical coupling in thin film Fe0.7Ga0.3/BaTiO3 bilayer structures mechanically released from the growth substrate. The domain wall motion is observed dynamically, allowing the direct association of local magnetic ordering throughout a range of applied electric fields. During application of similar to 7-11 MV/m electric fields to the piezoelectric BaTiO3 film, local magnetic domains rearrange in the ferromagnetic Fe0 7Ga0 3 layer due to the transfer of strain from the BaTiO3 film. A simulation based on micromagnetic modeling shows a magnetostrictive anisotropy of 25 kPa induced in the Fe0.7Ga0.3 due to the strain. This electric-field-dependent uniaxial anisotropy is proposed as a possible mechanism to control the coercive held during operation of an integrated rnagnetoelectric memory node.

引用

页码：1219 / 1223

页数：5

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