Scanning tunneling microscopy images of III-V semiconductor alloys: Strain effects

被引：7

作者：

McKay, HA ^{[1
]}

Chen, HJ

Feenstra, RM

Poole, PJ

机构：

[1] Carnegie Mellon Univ, Dept Phys, Pittsburgh, PA 15213 USA

[2] Natl Res Council Canada, Inst Microstruct Sci, Ottawa, ON K1A 0R6, Canada

来源：

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B | 2003年 / 21卷 / 01期

关键词：

D O I：

10.1116/1.1529651

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Scanning tunneling microscope. images of. lattice-matched InGaAs/InP structures were investigated using autocorrelation analysis. Correlation lengths and correlation amplitudes were calculated from constant-current empty-state images. Theoretical STM images were calculated from a model which only considered surface displacements due to strain relaxation. By comparing model and experimental correlation lengths and amplitudes it is concluded that contrast variations. in constant-current images are dominated by strain relaxation effects. Changes in probe tip geometry and. applications of this technique to study clustering in III-V alloys are also discussed. (C) 2003 American Vacuum Society.

引用

页码：18 / 22

页数：5

共 18 条

[1] Atomic resolution noncontact atomic force and scanning tunneling microscopy of TiO2(110)-(1x1) and -(1x2):: Simultaneous imaging of surface structures and electronic states [J].

Ashino, M ;

Sugawara, Y ;

Morita, S ;

Ishikawa, M .

PHYSICAL REVIEW LETTERS, 2001, 86 (19) :4334-4337

[2] Determination of 2D pair correlations and pair interaction energies of In atoms in molecular beam epitaxially grown InGaAs alloys [J].

Chao, KJ ;

Shih, CK ;

Gotthold, DW ;

Streetman, BG .

PHYSICAL REVIEW LETTERS, 1997, 79 (24) :4822-4825

[3] Enhanced group-V intermixing in InGaAs InP quantum wells studied by cross-sectional scanning tunneling microscopy [J].

Chen, HJ ;

Feenstra, RM ;

Piva, PG ;

Goldberg, RD ;

Mitchell, IV ;

Aers, GC ;

Poole, PJ ;

Charbonneau, S .

APPLIED PHYSICS LETTERS, 1999, 75 (01) :79-81

[4] InGaAs/InP quantum well intermixing studied by cross-sectional scanning tunneling microscopy [J].

Chen, HJ ;

McKay, HA ;

Feenstra, RM ;

Aers, GC ;

Poole, PJ ;

Williams, RL ;

Charbonneau, S ;

Piva, PG ;

Simpson, TW ;

Mitchell, IV .

JOURNAL OF APPLIED PHYSICS, 2001, 89 (09) :4815-4823

[5] Comparison of electronic and mechanical contrast in scanning tunneling microscopy images of semiconductor heterojunctions [J].

Feenstra, RM .

PHYSICA B-CONDENSED MATTER, 1999, 273-4 :796-802

[6] SCANNING-TUNNELING-MICROSCOPY OF INAS/GASB SUPERLATTICES - SUBBANDS, INTERFACE ROUGHNESS, AND INTERFACE ASYMMETRY [J].

FEENSTRA, RM ;

COLLINS, DA ;

TING, DZY ;

WANG, MW ;

MCGILL, TC .

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1994, 12 (04) :2592-2597

[7]

Gonzalez R. C., 1977, DIGITAL IMAGE PROCES

[8] Alloy ordering in GaInP alloys: A cross-sectional scanning tunneling microscopy study [J].

Liu, N ;

Shih, CK ;

Geisz, J ;

Mascarenhas, A ;

Olson, JM .

APPLIED PHYSICS LETTERS, 1998, 73 (14) :1979-1981

[9] INDIUM DISTRIBUTION IN INGAAS QUANTUM WIRES OBSERVED WITH THE SCANNING TUNNELING MICROSCOPE [J].

PFISTER, M ;

JOHNSON, MB ;

ALVARADO, SF ;

SALEMINK, HWM ;

MARTI, U ;

MARTIN, D ;

MORIERGENOUD, F ;

REINHART, FK .

APPLIED PHYSICS LETTERS, 1995, 67 (10) :1459-1461

[10]

Press W.H., 1992, NUMERICAL RECIPES FO

← 1 2 →