Photoluminescence of SiO2 layers prepared on β-SiC films and an analysis of their elemental composition

被引：0
作者：
Danishevski, A. M.
Lebedev, V. M.
Rogachev, A. Yu.
Shuman, V. B.
Sitnikova, A. A.
Zolotareva, R. V.
机构：
[1] Russian Acad Sci, AF Ioffe Physicotech Inst, St Petersburg 194021, Russia
[2] Russian Acad Sci, Konstantinov St Petersburg Inst Nucl Phys, Gatchina 188300, Leningradskaya, Russia
来源：
PHYSICS OF THE SOLID STATE | 2007年 / 49卷 / 05期
关键词：
D O I：
10.1134/S1063783407050058
中图分类号：
O469 [凝聚态物理学];
学科分类号：
070205 ;
摘要：
The spectra of pulsed time-resolved photoluminescence of oxidized films prepared through electrochemical oxidation on SiC/Si films are investigated. The elemental composition of the films is analyzed using Rutherford backscattering and nuclear reactions. It is revealed that a certain part of the carbon atoms remain in the oxide. The specific features of the parameters of the spectral bands and their kinetics with time are explained by the presence of carbon uniformly distributed throughout the oxide. The structure of oxides at different oxidation times is examined with the use of electron microscopy. Conclusions are drawn regarding possible photoluminescence centers.
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页码：831 / 838
页数：8
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