Effect of nitridation on structure, electrical and optical properties of InN epilayers grown on sapphire by PAMBE

被引：10
作者：
Zhao, Yang [1 ]
Wang, Hui [2 ]
Wu, Guoguang [1 ]
Jing, Qiang [1 ]
Gao, Fubin [1 ]
Li, Wancheng [1 ]
Zhang, Baolin [1 ]
Du, Guotong [1 ,3 ]
机构：
[1] Jilin Univ, Coll Elect Sci & Engn, State Key Lab Integrated Optoelect, Changchun 130012, Peoples R China
[2] Henan Univ Sci & Technol, Sch Phys & Engn, Luoyang 471003, Peoples R China
[3] Dalian Univ Technol, Sch Phys & Optoelect Technol, Dalian 116023, Peoples R China
来源：
VACUUM | 2015年 / 111卷
基金：
中国国家自然科学基金;
关键词：
Indium nitride; PAMBE; Nitridation; Photoluminescence; MOLECULAR-BEAM EPITAXY; FUNDAMENTAL-BAND GAP; INDIUM NITRIDE; ROOM-TEMPERATURE; FILMS; PHOTOLUMINESCENCE; ENERGY; OXYGEN;
D O I：
10.1016/j.vacuum.2014.09.014
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
InN epilayers were prepared on c-plane (0001) sapphire substrates by plasma-assisted molecular beam epitaxy (PAMBE). We studied the effect of nitridation on structure, surface morphology, electrical and optical properties of InN films using X-ray diffraction (XRD), Reflection high-energy electron diffraction (RHEED), scanning electron microscopy (SEM), atomic force microscopy (AFM), Hall and photoluminescence (PL) measurement. The results showed a significant improvement of the crystalline qualities and surface morphologies and enhancement of the electrical and optical properties for InN films grown after nitridation. Moreover, the energy band-gap of InN films were also determined by optical absorption and photoluminescence (PL) measurement. (C) 2014 Elsevier Ltd. All rights reserved.
引用
收藏
页码：15 / 18
页数：4
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