QUBiC4X:: An fT/fmax=130/140GHz SiGe:C-BiCMOS manufacturing technology with elite passives for emerging microwave applications

被引：52

作者：

Deixler, P ^{[1
]}

Rodriguez, A ^{[1
]}

De Boer, W ^{[1
]}

Sun, H ^{[1
]}

Colclaser, R ^{[1
]}

Bower, D ^{[1
]}

Bell, N ^{[1
]}

Yao, A ^{[1
]}

Brock, R ^{[1
]}

Bouttement, Y ^{[1
]}

Hurkx, GAM ^{[1
]}

Tiemeijer, LF ^{[1
]}

Paasschens, JCJ ^{[1
]}

Huizing, HGA ^{[1
]}

Hartskeerl, DMH ^{[1
]}

Agarwal, P ^{[1
]}

Magnee, PHC ^{[1
]}

Aksen, E ^{[1
]}

Slotboom, JW ^{[1
]}

机构：

[1] Philips RF Device Modeling Grp, San Jose, CA USA

来源：

PROCEEDING OF THE 2004 BIPOLAR/BICMOS CIRCUITS AND TECHNOLOGY MEETING | 2004年

关键词：

D O I：

10.1109/BIPOL.2004.1365788

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

QUBiC4X is a cost-effective ultra-high-speed SiGe:C RF-BiCMOS technology for emerging microwave applications with NPN f(T)/f(max) up to 130/140GHz, enhanced RF-oriented 2.5V CMOS, SiGe:C Power Amplifiers with 88% power-added efficiency, distinguished substrate isolation, full suite of elite high-density passives, 5 metal layers and an advanced design flow.

引用

页码：233 / 236

页数：4

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Deixler, P ;

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Bell, N ;

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