Study of the energy consumption optimization on RRAM memory array for SCM applications

被引：0

作者：

Cagli, C. ^{[1
]}

Molas, G. ^{[1
]}

Harrand, M. ^{[1
]}

Bernasconi, S. ^{[1
]}

Charpin, C. ^{[1
]}

El Hajjam, K. ^{[1
]}

Nodin, J. F. ^{[1
]}

Reimbold, G. ^{[1
]}

机构：

[1] Univ Grenoble Alpes, CEA LETI, Grenoble, France

来源：

2017 IEEE 9TH INTERNATIONAL MEMORY WORKSHOP (IMW) | 2017年

关键词：

RRAM; HfO2; energy consumption; read margin; resistance window; storage class memory;

D O I：

暂无

中图分类号：

TP3 [计算技术、计算机技术];

学科分类号：

0812 ;

摘要：

This paper focuses on the programming operation optimization of a HfO2-based Resistive RAM (RRAM) memory array for low power consumption application. We will show how the resistance window (RW) depends on the write/erase energy, and we will give directives to minimize the operating energy cost. In particular, the advantage of short pulse over low current operation is demonstrated. We also link the array size with the programming energy. Gain with smart programming scheme is also discussed. Eventually we explain how the operating energy impacts on the maximum transfer rate (RT) achievable in a product.

引用

页码：76 / 79

页数：4

共 7 条

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