Low-energy electron microscopy

被引:52
作者
Tromp, RM [1 ]
机构
[1] IBM Corp, Div Res, Thomas J Watson Res Ctr, Dept Analyt Sci, Yorktown Hts, NY 10598 USA
关键词
D O I
10.1147/rd.444.0503
中图分类号
TP3 [计算技术、计算机技术];
学科分类号
0812 ;
摘要
Low-energy electron microscopy (LEEM) is a relatively new microscopy technique, capable of high-resolution (5 nm) video-rate imaging of surfaces and interfaces. This opens up the possibility of studying dynamic processes at surfaces, such as thin-film growth, strain relief, etching and adsorption, and phase transitions in real time, in situ, as they occur. The resulting video movies contain an unprecedented amount of information that is amenable to detailed, quantitative analysis. In this paper we discuss the principles of LEEM and its application to problems in science and technology.
引用
收藏
页码:503 / 516
页数:14
相关论文
共 46 条
[1]   CRITICAL-BEHAVIOR AT CHIRAL MELTING - DISORDERING OF THE SI(113)-(3X1) RECONSTRUCTION [J].
ABERNATHY, DL ;
BIRGENEAU, RJ ;
BLUM, KI ;
MOCHRIE, SGJ .
PHYSICAL REVIEW LETTERS, 1993, 71 (05) :750-753
[2]   MAGNETIC DEFLEXION OF ELECTRON BEAMS WITHOUT ASTIGMATISM [J].
ARCHARD, GD ;
MULVEY, T .
JOURNAL OF SCIENTIFIC INSTRUMENTS, 1958, 35 (08) :279-283
[3]   SURFACE ELECTRON-MICROSCOPY - THE FIRST 30 YEARS [J].
BAUER, E .
SURFACE SCIENCE, 1994, 299 (1-3) :102-115
[4]  
BAUER E, 1962, ELECTRON MICROS, V1, pD11
[6]   SURFACTANTS IN EPITAXIAL-GROWTH [J].
COPEL, M ;
REUTER, MC ;
KAXIRAS, E ;
TROMP, RM .
PHYSICAL REVIEW LETTERS, 1989, 63 (06) :632-635
[7]   SURFACTANT ASSISTED GROWTH OF 850-NM LIGHT MODULATORS [J].
CUNNINGHAM, JE ;
GOOSSEN, KW ;
JAN, W ;
WILLIAMS, MD .
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1995, 13 (02) :646-649
[8]   ATOMIC-STRUCTURE OF CLEAN SI(113) SURFACES - THEORY AND EXPERIMENT [J].
DABROWSKI, J ;
MUSSIG, HJ ;
WOLFF, G .
PHYSICAL REVIEW LETTERS, 1994, 73 (12) :1660-1663
[9]  
Degenhardt R., 1992, THESIS TH DARMSTADT
[10]   A 1-1 ELECTRON STEPPER [J].
DELONG, A ;
KOLARIK, V .
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1989, 7 (06) :1422-1425