Advanced Damascene integration using selective deposition of barrier metal with Self Assemble Monolayer

被引：5

作者：

Kawasaki, H. ^{[1
]}

Iwashita, M. ^{[1
]}

Warashina, H. ^{[1
]}

Nagai, H. ^{[1
]}

Iwai, K. ^{[2
]}

Komatsu, H. ^{[3
]}

Ozaki, Y. ^{[3
]}

Pattanaik, G. ^{[4
]}

机构：

[1] Tokyo Electron Ltd, Corp R&D Dept, Nirasaki, Yamanashi, Japan

[2] Tokyo Electron Amer Inc, 3188 NE Aloclek Dr, Hillsboro, OR 97124 USA

[3] JSR Corp, Fine Elect Mat Res Labs, Lithog Solut Lab, Yokaichi, Mie, Japan

[4] America LLC, TEL Technol Ctr, NanoFab 300 South 255 Fuller Rd,Suite 214, Albany, NY 12203 USA

来源：

IITC2021: 2021 IEEE INTERNATIONAL INTERCONNECT TECHNOLOGY CONFERENCE (IITC) | 2021年

关键词：

SAM; selectivity; via; prefill; ELD-Cu;

D O I：

10.1109/IITC51362.2021.9537311

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Selective deposition of Cu diffusion barrier metal layer on dielectric with Self-Assembled Monolayer (SAM) has been demonstrated. Via resistance is expected to decrease by eliminating the barrier at via bottom in dual- and semi-damascene structure. In this study, we report the evaluation of SAMs to enable selective ALD-barrier metal deposition and, as an example, we show Cu via prefill integration using ELD-Cu with no barrier / liner at via bottom and no seam void for metal filling.

引用

页数：3