Low-temperature diamagnetic muonium states in n-type gallium arsenide

被引：4

作者：

Bates, ES

Lichti, RL ^{[1
]}

Cox, SFJ

Schwab, C

机构：

[1] Texas Tech Univ, Dept Phys, Lubbock, TX 79409 USA

[2] Rutherford Appleton Lab, ISIS Facil, Chilton OX11 0QX, Oxon, England

[3] UCL, London WC1E 6BT, England

[4] CNRS, PHASE, F-67037 Strasbourg, France

来源：

PHYSICA B-CONDENSED MATTER | 2000年 / 289卷 / 289期

基金：

美国国家科学基金会;

关键词：

Mu(-); GaAs; zero-field relaxation; Mu-donor interactions;

D O I：

10.1016/S0921-4526(00)00252-0

中图分类号：

O469 [凝聚态物理学];

学科分类号：

070205 ;

摘要：

Zero-field depolarization rates and transverse-field mu SR precession signals are investigated for six n-type GaAs samples to obtain information on the low-temperature diamagnetic muonium state. The onset temperature for growth of the Mu(T)(-) component shifts downward with n-type concentration, as expected for e(-) capture. A zero-field feature depends on donor species and concentration, suggesting donor involvement in the low-temperature state, thus supporting assignment to a Mu-donor pair. (C) 2000 Elsevier Science B.V. All rights reserved.

引用

页码：550 / 553

页数：4

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