Low-temperature diamagnetic muonium states in n-type gallium arsenide

被引：4
作者：
Bates, ES
Lichti, RL [1 ]
Cox, SFJ
Schwab, C
机构：
[1] Texas Tech Univ, Dept Phys, Lubbock, TX 79409 USA
[2] Rutherford Appleton Lab, ISIS Facil, Chilton OX11 0QX, Oxon, England
[3] UCL, London WC1E 6BT, England
[4] CNRS, PHASE, F-67037 Strasbourg, France
来源：
PHYSICA B-CONDENSED MATTER | 2000年 / 289卷 / 289期
基金：
美国国家科学基金会;
关键词：
Mu(-); GaAs; zero-field relaxation; Mu-donor interactions;
D O I：
10.1016/S0921-4526(00)00252-0
中图分类号：
O469 [凝聚态物理学];
学科分类号：
070205 ;
摘要：
Zero-field depolarization rates and transverse-field mu SR precession signals are investigated for six n-type GaAs samples to obtain information on the low-temperature diamagnetic muonium state. The onset temperature for growth of the Mu(T)(-) component shifts downward with n-type concentration, as expected for e(-) capture. A zero-field feature depends on donor species and concentration, suggesting donor involvement in the low-temperature state, thus supporting assignment to a Mu-donor pair. (C) 2000 Elsevier Science B.V. All rights reserved.
引用
收藏
页码：550 / 553
页数：4
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