Low-temperature diamagnetic muonium states in n-type gallium arsenide

被引：4
|
作者：
Bates, ES
Lichti, RL [1 ]
Cox, SFJ
Schwab, C
机构：
[1] Texas Tech Univ, Dept Phys, Lubbock, TX 79409 USA
[2] Rutherford Appleton Lab, ISIS Facil, Chilton OX11 0QX, Oxon, England
[3] UCL, London WC1E 6BT, England
[4] CNRS, PHASE, F-67037 Strasbourg, France
来源：
PHYSICA B-CONDENSED MATTER | 2000年 / 289卷 / 289期
基金：
美国国家科学基金会;
关键词：
Mu(-); GaAs; zero-field relaxation; Mu-donor interactions;
D O I：
10.1016/S0921-4526(00)00252-0
中图分类号：
O469 [凝聚态物理学];
学科分类号：
070205 ;
摘要：
Zero-field depolarization rates and transverse-field mu SR precession signals are investigated for six n-type GaAs samples to obtain information on the low-temperature diamagnetic muonium state. The onset temperature for growth of the Mu(T)(-) component shifts downward with n-type concentration, as expected for e(-) capture. A zero-field feature depends on donor species and concentration, suggesting donor involvement in the low-temperature state, thus supporting assignment to a Mu-donor pair. (C) 2000 Elsevier Science B.V. All rights reserved.
引用
收藏
页码：550 / 553
页数：4
相关论文
共 50 条
  • [1] LOW-TEMPERATURE HEAT TREATMENT OF UNDOPED N-TYPE GALLIUM ARSENIDE
    SOLOVEVA, EV
    LYUTOV, YF
    SOVIET PHYSICS SEMICONDUCTORS-USSR, 1971, 4 (09): : 1567 - &
  • [2] LOW-TEMPERATURE VELOCITY-FIELD CHARACTERISTIC OF N-TYPE GALLIUM ARSENIDE
    ACKET, GA
    LAM, HT
    HEINLE, W
    PHYSICS LETTERS A, 1969, A 29 (10) : 596 - &
  • [3] TEMPERATURE DEPENDENCE OF PHOTOCONDUCTIVE LIFETIME IN N-TYPE GALLIUM ARSENIDE
    SHIRAFUJI, J
    JAPANESE JOURNAL OF APPLIED PHYSICS, 1966, 5 (06) : 469 - +
  • [4] Muonium transitions in n-type gallium nitride
    Dawdy, MR
    Lichti, RL
    Cox, SFJ
    Head, TL
    Schwab, C
    PHYSICA B-CONDENSED MATTER, 2000, 289 : 546 - 549
  • [5] MAGNETORESISTANCE OF UNDOPED N-TYPE GALLIUM ARSENIDE AT LOW TEMPERATURES
    HALBO, L
    SLADEK, RJ
    PHYSICAL REVIEW, 1968, 173 (03): : 794 - &
  • [6] Donor metastable states and the polaron effect in n-type gallium arsenide
    Barmby, PW
    Dunn, JL
    Bates, CA
    Klaassen, TO
    vanderSluijs, AJ
    ICDS-18 - PROCEEDINGS OF THE 18TH INTERNATIONAL CONFERENCE ON DEFECTS IN SEMICONDUCTORS, PTS 1-4, 1995, 196- : 1019 - 1023
  • [7] Theoretical modelling of donor metastable states in n-type gallium arsenide
    Barmby, PW
    Dunn, JL
    Bates, CA
    Klaassen, TO
    ICDS-18 - PROCEEDINGS OF THE 18TH INTERNATIONAL CONFERENCE ON DEFECTS IN SEMICONDUCTORS, PTS 1-4, 1995, 196- : 1013 - 1017
  • [8] Defect levels in n-type gallium arsenide and gallium aluminum arsenide layers
    Saxena, AK
    PHYSICA STATUS SOLIDI A-APPLIED RESEARCH, 2001, 183 (02): : 281 - 297
  • [9] TEMPERATURE-DEPENDENCE OF CATHODOLUMINESCENCE IN N-TYPE GALLIUM-ARSENIDE
    JONES, GAC
    NAG, BR
    GOPINATH, A
    JOURNAL OF PHYSICS D-APPLIED PHYSICS, 1974, 7 (01) : 183 - 193
  • [10] NEGATIVE MAGNETORESISTANCE OF N-TYPE GALLIUM ARSENIDE
    BARANSKII, PI
    GLUSHKOV, EA
    TELEVNAY.EA
    SOVIET PHYSICS SEMICONDUCTORS-USSR, 1970, 3 (09): : 1169 - +
12345