Radiation damage and annealing behavior of 2.0 MeV 160Er+ implanted silicon

被引：0

作者：

Li, YG ^{[1
]}

Tan, CY

Zhang, JP

Xue, CS

Xu, HL

Liu, PJ

Wang, L

机构：

[1] Shandong Univ, Dept Phys, Ion Beam Lab, Jinan 250100, Peoples R China

[2] Shandong Normal Univ, Inst Semicond, Jinan 250014, Peoples R China

来源：

MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY | 2000年 / 77卷 / 01期

关键词：

ion implantation; damage profile; annealing behavior;

D O I：

10.1016/S0921-5107(99)00600-5

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

Radiation damage and annealing behavior of Si (100) implanted with 2 MeV Er+ ions with various doses have been investigated using Rutherford backscattering spectrometry and channelling (RBS/C) technique. The damage profile of silicon substrate induced by 2.0 MeV E+, at a dose of 1 x 10(14) ions cm(-2) was extracted using the multiple-scattering dechannelling model of Feldman, and the result is in good agreement with the TRIM96 calculation. The experimental results show that the annealing behavior of 2.0 MeV Er+ implanted into silicon is strongly influenced by the implantation dose and annealing temperature. For the samples with dose of 5 x 10(14) ions cm(-2) and more, an abnormal annealing behavior was found and a qualitative explanation has been given. (C) 2000 Elsevier Science S.A. All rights reserved.

引用

页码：1 / 5

页数：5

共 13 条

[1] BACKSCATTERING AND ELECTRON-MICROSCOPY STUDY OF MEGA-ELECTRON VOLT GOLD IMPLANTATION INTO SILICON [J].

ALFORD, TL ;

THEODORE, ND .

JOURNAL OF APPLIED PHYSICS, 1994, 76 (11) :7265-7271

[2] DEFECT STUDIES IN CRYSTALS BY MEANS OF CHANNELING [J].

BOGH, E .

CANADIAN JOURNAL OF PHYSICS, 1968, 46 (06) :653-&

[3]

CHU WK, 1978, BACKSCATTERING SPECT, P342

[4] CONTROL OF DEFECTS IN C+, GE+, AND ER+ IMPLANTED SI USING POST AMORPHIZATION AND SOLID-PHASE REGROWTH [J].

CRISTIANO, F ;

ZHANG, JP ;

WILSON, RJ ;

GILLIN, WP ;

HEMMENT, PLF .

NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS, 1995, 96 (1-2) :265-270

[5] DEPTH PROFILES OF LATTICE DISORDER RESULTING FORM ION BOMBARDMENT OF SILICON SINGLE CRYSTALS [J].

FELDMAN, LC ;

RODGERS, JW .

JOURNAL OF APPLIED PHYSICS, 1970, 41 (09) :3776-&

[6] A LGA MODEL FOR FLUID-FLOW IN HETEROGENEOUS POROUS-MEDIA [J].

GAO, Y ;

SHARMA, MM .

TRANSPORT IN POROUS MEDIA, 1994, 17 (01) :1-17

[7] A SYSTEMATIC ANALYSIS OF DEFECTS IN ION-IMPLANTED SILICON [J].

JONES, KS ;

PRUSSIN, S ;

WEBER, ER .

APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING, 1988, 45 (01) :1-34

[8] Erbium implanted thin film photonic materials [J].

Polman, A .

JOURNAL OF APPLIED PHYSICS, 1997, 82 (01) :1-39

[9] LATTICE DISORDER IN LINBO3 CRYSTALS INDUCED BY MEV CU+ IMPLANTATION [J].

SHI, BR ;

WANG, KM ;

WANG, ZL ;

LIU, XD ;

XU, TB ;

ZHU, PR .

JOURNAL OF APPLIED PHYSICS, 1992, 72 (03) :899-903

[10] DAMAGE FORMATION AND ANNEALING OF HIGH-ENERGY ION-IMPLANTATION IN SI [J].

TAMURA, M ;

SUZUKI, T .

NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS, 1989, 39 (1-4) :318-329

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