Spin and charge transport in double-junction Fe/MgO/GaAs/MgO/Fe heterostructures

被引：3
作者：
Wolski, S. [1 ]
Szczepanski, T. [1 ]
Dugaev, V. K. [1 ,2 ,3 ]
Barnas, J. [4 ,5 ]
Landgraf, B. [6 ]
Slobodskyy, T. [6 ]
Hansen, W. [6 ]
机构：
[1] Rzeszow Univ Technol, Dept Phys, PL-35959 Rzeszow, Poland
[2] Univ Lisbon, Inst Super Tecn, Dept Fis, P-1049001 Lisbon, Portugal
[3] Univ Lisbon, Inst Super Tecn, CFIF, P-1049001 Lisbon, Portugal
[4] Adam Mickiewicz Univ, Fac Phys, PL-61614 Poznan, Poland
[5] Polish Acad Sci, Inst Mol Phys, PL-60179 Poznan, Poland
[6] Univ Hamburg, Inst Appl Phys, D-20355 Hamburg, Germany
来源：
JOURNAL OF APPLIED PHYSICS | 2015年 / 117卷 / 04期
关键词：
ROOM-TEMPERATURE; INJECTION; MAGNETORESISTANCE; METAL; LAYER;
D O I：
10.1063/1.4906397
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
We present theoretical and experimental results on tunneling current in single Fe/MgO/GaAs and double Fe/MgO/GaAs/MgO/Fe tunnel junctions. The charge and spin currents are calculated as a function of external voltage for different sets of parameters characterizing the semiconducting GaAs layer. Transport characteristics of a single Fe/MgO/GaAs junction reveal typical diode as well as spin diode features. The results of numerical calculations are compared with current-voltage characteristics measured experimentally for double tunnel junction structures, and a satisfactory agreement of the theoretical and experimental results has been achieved. (C) 2015 AIP Publishing LLC.
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页数：7
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