Photoemission study of Gd atoms on CdTe(100) surface

被引：7

作者：

Guziewicz, E

Szamota-Sadowska, K

Kowalski, BJ

Orlowski, BA

Ghijsen, J

Johnson, RL

机构：

[1] Polish Acad Sci, Inst Phys, PL-02668 Warsaw, Poland

[2] Fac Univ Notre Dame Paix, LISE, B-5000 Namur, Belgium

[3] Univ Hamburg, Inst Expt Phys 2, D-22761 Hamburg, Germany

来源：

APPLIED SURFACE SCIENCE | 2000年 / 166卷 / 1-4期

关键词：

electronic structure; semimagnetic semiconductors; resonant photoemission spectroscopy;

D O I：

10.1016/S0169-4332(00)00422-0

中图分类号：

O64 [物理化学（理论化学）、化学物理学];

学科分类号：

070304 ; 081704 ;

摘要：

A few monolayers of Gd atoms were evaporated on a clean CdTe(p)(100) (bulk crystal) and CdTe(n)(100) (epitaxial layer) surface. Constant initial state (CIS) spectra were measured at the Gd4d ->, Gd4f Fano resonance tin the photon energy range of 140-160 eV) both after evaporation and heating processes. The binding energy of the Gd4f state was determined after Gd evaporation (9.43 and 9.50 eV for p- and n-type crystals, respectively) and after heating (9.00 and 9.80 eV). Energy distribution curves (EDCs) measured in the photon energy range (50-100 eV) show additional density of states at the valence band edge only for CdTe(n)/Gd crystal. (C) 2000 Elsevier Science B.V. All rights reserved.

引用

页码：231 / 236

页数：6

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