Plasma-based fluorine ion implantation into dental materials for inhibition of bacterial adhesion

被引:1
|
作者
Arita, Nurhaerant Kenji [1 ]
Shinonaga, Yukari [1 ]
Nishino, Mizuho [1 ]
机构
[1] Univ Tokushima, Grad Sch, Inst Hlth Biosci, Dept Pediat Dent, Tokushima 7708504, Japan
关键词
ion implantation; fluorine; bacterial adhesion;
D O I
暂无
中图分类号
R78 [口腔科学];
学科分类号
1003 ;
摘要
The aims of this study were to evaluate the fluorine depth profiles of pure titanium (Ti), stainless steel (SUS), and polymethyl methacrylate (PMMA) modified by plasma-based fluorine ion implantation and the effects of fluorine ion implantation on contact angle, fluoride ion release, and S. mutans adhesion. Fluorine-based gases used were Ar+F-2 and CF4. By means of SIMS, it was found that the peak count of PMMA was the lowest while that of Ti was the highest. Then, up to one minute after Ar sputtering, the presence of fluorine and chromic fluoride could be detected by XPS in the surface and subsurface layer. As for the effects of using CF4 gas for fluorine ion implantation into SUS substrate, the results were: contact angle was significantly increased; no fluoride ion release was detected; antibacterial activity was significantly increased while initial adhesion was decreased. These findings thus indicated that plasma-based fluorine ion implantation into SUS with CF4 gas provided surface antibacterial activity which was useful in inhibiting bacterial adhesion.
引用
收藏
页码:684 / 692
页数:9
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