Surface enhanced Raman spectroscopy platform based on graphene with one-year stability

被引：16

作者：

Tite, Teddy ^{[1
]}

Barnier, Vincent ^{[2
]}

Donnet, Christophe ^{[1
]}

Loir, Anne-Sophie ^{[1
]}

Reynaud, Stephanie ^{[1
]}

Michalon, Jean-Yves ^{[1
]}

Vocanson, Francis ^{[1
]}

Garrelie, Florence ^{[1
]}

机构：

[1] Univ Lyon, UJM St Etienne, CNRS, Lab Hubert Curien,UMR 5516, 18 Rue Prof Benoit Lauras, F-42000 St Etienne, France

[2] Ecole Natl Super Mines, CNRS, UMR 5307, Lab Georges Friedel, 158 Cours Fauriel, F-42023 St Etienne, France

来源：

THIN SOLID FILMS | 2016年 / 604卷

关键词：

Pulsed laser deposition; Graphene; Surface enhanced Raman spectroscopy; CHEMICAL FUNCTIONALIZATION; SERS; SUBSTRATE; SILICIDE; NICKEL; GROWTH; OXIDE; NANOPARTICLES; PESTICIDES; NUCLEATION;

D O I：

10.1016/j.tsf.2016.03.024

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

We report the synthesis, characterization and use of a robust surface enhanced Raman spectroscopy platform with a stable detection for up to one year of Rhodamine R6G at a concentration of 10(-6) M. The detection of aminothiophenol and methyl parathion, as active molecules of commercial insecticides, is further demonstrated at concentrations down to 10(-5)-10(-6) M. This platform is based on large scale textured few-layer (fl) graphene obtained without any need of graphene transfer. The synthesis route is based on diamond-like carbon films grown by pulsed laser deposition, deposited onto silicon substrates covered by a Ni layer prior to diamond-like carbon deposition. The formation of fl-graphene film, confirmed by Raman spectroscopy and mapping, is obtained by thermal annealing inducing the diffusion of Ni atoms and the concomitant formation of nickel silicide compounds, as identified by Raman and Auger electron spectroscopies. The textured fl-graphene films were decorated with gold nanoparticles to optimize the efficiency of the SERS device to detect organic molecules at low concentrations. (C) 2016 Elsevier B.V. All rights reserved.

引用

页码：74 / 80

页数：7

共 54 条

[1] In situ micro-Raman analysis and X-ray diffraction of nickel silicide thin films on silicon [J].