Electron states in a semiconductor quantum well wire in presence of an external transversal electric field

被引：7

作者：

Fernandez-Lozada, M. ^{[1
]}

Betancourt-Riera, Ri ^{[2
]}

Betancourt-Riera, Re ^{[2
]}

Nieto Jalil, J. M. ^{[3
]}

机构：

[1] Univ Sonora, Dept Invest Fis, Apartado Postal 5-88, Hermosillo 83190, Sonora, Mexico

[2] Inst Tecnol Hermosillo, Ave Tecnol S-N, Hermosillo 83170, Sonora, Mexico

[3] Tecnol Monterrey, Campus Sonora Norte, Hermosillo 83000, Sonora, Mexico

来源：

PHYSICA SCRIPTA | 2018年 / 93卷 / 09期

关键词：

electron states; nanowire; quantum well wires; RAMAN-SCATTERING; ABSORPTION ENHANCEMENT; OPTICAL-ABSORPTION; BESSEL-FUNCTIONS; TRANSITIONS; NANOWIRES;

D O I：

10.1088/1402-4896/aad4d8

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

In this work, the electron states corresponding to a semiconductor quantum well wire grown on a GaAs/AlGaAs matrix with a cylindrical symmetry, in the presence of an external electric field which is homogenous and perpendicular to the axis of the system, is obtained. This study takes into consideration the partial and total confinement of the charge carriers, and assumes T = 0K. The model on which this is based considers a system of parabolic bands, which unfolds in a system of sub-bands due to confinement. In addition, the selection rules for intraband and interband optic transitions are studied.

引用

页数：8

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