Surface modified NiOx as an efficient hole transport layer in inverted perovskite solar cells

被引:4
作者
Yang, Yan [1 ,2 ]
Chen, Jieda [1 ,2 ]
Li, Chengyuan [1 ]
Zhang, Wei [2 ,3 ]
Zhang, Shan-Ting [2 ]
Li, Dongdong [2 ]
Zhang, Jiafan [2 ]
Ding, Yi'an [2 ]
Lu, Linfeng [2 ]
Song, Ye [1 ]
机构
[1] Nanjing Univ Sci & Technol, Key Lab Soft Chem & Funct Mat, Educ Minist, Nanjing 210094, Peoples R China
[2] Chinese Acad Sci, Interdisciplinary Res Ctr, Shanghai Adv Res Inst, 99 Haike Rd,Zhangjiang Hitech Pk, Shanghai 201210, Peoples R China
[3] Nanjing Univ Aeronaut & Astronaut, Coll Sci, Jiangsu Key Lab Mat & Technol Energy Convers, Nanjing 210016, Peoples R China
基金
上海市自然科学基金;
关键词
OXIDE THIN-FILMS; NICKEL-OXIDE; DEFECT PASSIVATION; HIGHLY EFFICIENT; PERFORMANCE; TEMPERATURE; HYSTERESIS; POTASSIUM; LENGTHS; STATES;
D O I
10.1007/s10854-022-08704-w
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
Hole transporting materials play a vital role in improving the performance of perovskite solar cells (PSCs). In this work, different concentrations of poly[bis(4-phenyl)(2, 4, 6-trimethylphenyl)amine] (PTAA) are used to modify the surface of sputtered nickel oxide (NiOx) as hole transport layer (HTL) in inverted PSCs. After the introduction of PTAA, the roughness of the sputtered NiOx films decreases, while the crystallinity of the perovskite layer increases. The carrier transport across the interface between the sputtered NiOx film and the perovskite layer is significantly improved. A power conversion efficiency of 18.5% is achieved based on PTAA-modified sputtered NiOx, exhibiting a 15.2% improvement compared to its pristine counterpart.
引用
收藏
页码:18522 / 18532
页数:11
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