Weak anti-localization of the two-dimensional electron gas in modulation-doped AlxGa1-xN/GaN heterostructures with two subbands occupation

被引：16

作者：

Lu, J ^{[1
]}

Shen, B

Tang, N

Chen, DJ

Zhao, H

Liu, DW

Zhang, R

Shi, Y

Zheng, YD

Qiu, ZJ

Gui, YS

Zhu, B

Yao, W

Chu, JH

Hoshino, K

Arakawa, Y

机构：

[1] Nanjing Univ, Jiangsu Prov Key Lab Photon & Elect Mat Sci & Tec, Nanjing 210093, Peoples R China

[2] Nanjing Univ, Natl Lab Solid State Microstruct, Nanjing 210093, Peoples R China

[3] Nanjing Univ, Dept Phys, Nanjing 210093, Peoples R China

[4] Chinese Acad Sci, Shanghai Inst Tech Phys, Natl Lab Infrared Phys, Shanghai 200083, Peoples R China

[5] Univ Tokyo, Adv Sci & Technol Res Ctr, Meguro Ku, Tokyo 153, Japan

[6] Univ Tokyo, Inst Ind Sci, Meguro Ku, Tokyo 153, Japan

来源：

APPLIED PHYSICS LETTERS | 2004年 / 85卷 / 15期

基金：

中国国家自然科学基金; 高等学校博士学科点专项科研基金;

关键词：

D O I：

10.1063/1.1803949

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Weak anti-localization of the two-dimensional electron gas (2DEG) in a modulation-doped Al0.22Ga0.78N/GaN single heterostructure has been investigated through magnetoresistance measurements at low temperatures. The elastic scattering time tau(e), dephasing time tau(phi) and spin-orbit scattering time tau(so) at various temperatures are obtained. When the second subband in the triangular quantum well at the heterointerface is occupied by the 2DEG, the weak anti-localization is observed clearly, which is thought to be due to the strong spin-orbit effect induced by the intersubband scattering. The spin-orbit effect and the intersubband scattering become stronger with increasing temperature. (C) 2004 American Institute of Physics.

引用

页码：3125 / 3127

页数：3

共 16 条

[11] DYNAMICS OF ELECTRONS IN AN IMPURE METAL [J].

SCHMID, A .

ZEITSCHRIFT FUR PHYSIK, 1974, 271 (03) :251-256

[12] INFLUENCE OF BANDWIDTH AND DOPANT PROFILE ON QUANTUM INTERFERENCE FROM SUPERLATTICE TRANSPORT STUDIES [J].

SZOTT, W ;

JEDRZEJEK, C ;

KIRK, WP .

PHYSICAL REVIEW B, 1993, 48 (12) :8963-8979

[13] WEAK LOCALIZATION AND ELECTRON ELECTRON INTERACTION IN MODULATION-DOPED GAAS/ALGAAS HETEROSTRUCTURES [J].

TABORYSKI, R ;

LINDELOF, PE .

SEMICONDUCTOR SCIENCE AND TECHNOLOGY, 1990, 5 (09) :933-946

[14] Magnetoresistance oscillations induced by intersubband scattering of two-dimensional electron gas in Al0.22Ga0.78N/GaN heterostructures [J].

Tang, N ;

Shen, B ;

Zheng, ZW ;

Liu, J ;

Chen, DJ ;

Lu, J ;

Zhang, R ;

Shi, Y ;

Zheng, YD ;

Gui, YS ;

Jiang, CP ;

Qiu, ZJ ;

Guo, SL ;

Chu, JH ;

Hoshino, K ;

Someya, T ;

Arakawa, Y .

JOURNAL OF APPLIED PHYSICS, 2003, 94 (08) :5420-5422

[15] Very high breakdown voltage and large transconductance realized on GaN heterojunction field effect transistors [J].

Wu, YF ;

Keller, BP ;

Keller, S ;

Kapolnek, D ;

Kozodoy, P ;

Denbaars, SP ;

Mishra, UK .

APPLIED PHYSICS LETTERS, 1996, 69 (10) :1438-1440

[16] Occupation of the double subbands by the two-dimensional electron gas in the triangular quantum well at AlxGa1-xN/GaN heterostructures [J].

Zheng, ZW ;

Shen, B ;

Zhang, R ;

Gui, YS ;

Jiang, CP ;

Ma, ZX ;

Zheng, GZ ;

Guo, SL ;

Shi, Y ;

Han, P ;

Zheng, YD ;

Someya, T ;

Arakawa, Y .

PHYSICAL REVIEW B, 2000, 62 (12) :R7739-R7742

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