Weak anti-localization of the two-dimensional electron gas in modulation-doped AlxGa1-xN/GaN heterostructures with two subbands occupation

被引：16

作者：

Lu, J ^{[1
]}

Shen, B

Tang, N

Chen, DJ

Zhao, H

Liu, DW

Zhang, R

Shi, Y

Zheng, YD

Qiu, ZJ

Gui, YS

Zhu, B

Yao, W

Chu, JH

Hoshino, K

Arakawa, Y

机构：

[1] Nanjing Univ, Jiangsu Prov Key Lab Photon & Elect Mat Sci & Tec, Nanjing 210093, Peoples R China

[2] Nanjing Univ, Natl Lab Solid State Microstruct, Nanjing 210093, Peoples R China

[3] Nanjing Univ, Dept Phys, Nanjing 210093, Peoples R China

[4] Chinese Acad Sci, Shanghai Inst Tech Phys, Natl Lab Infrared Phys, Shanghai 200083, Peoples R China

[5] Univ Tokyo, Adv Sci & Technol Res Ctr, Meguro Ku, Tokyo 153, Japan

[6] Univ Tokyo, Inst Ind Sci, Meguro Ku, Tokyo 153, Japan

来源：

APPLIED PHYSICS LETTERS | 2004年 / 85卷 / 15期

基金：

中国国家自然科学基金; 高等学校博士学科点专项科研基金;

关键词：

D O I：

10.1063/1.1803949

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Weak anti-localization of the two-dimensional electron gas (2DEG) in a modulation-doped Al0.22Ga0.78N/GaN single heterostructure has been investigated through magnetoresistance measurements at low temperatures. The elastic scattering time tau(e), dephasing time tau(phi) and spin-orbit scattering time tau(so) at various temperatures are obtained. When the second subband in the triangular quantum well at the heterointerface is occupied by the 2DEG, the weak anti-localization is observed clearly, which is thought to be due to the strong spin-orbit effect induced by the intersubband scattering. The spin-orbit effect and the intersubband scattering become stronger with increasing temperature. (C) 2004 American Institute of Physics.

引用

页码：3125 / 3127

页数：3

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