Modelling of muonium charge cycles in n-type silicon

被引：3
|
作者：
Head, TL [1 ]
Lichti, RL [1 ]
机构：
[1] Texas Tech Univ, Dept Phys, Lubbock, TX 79409 USA
来源：
PHYSICA B-CONDENSED MATTER | 2000年 / 289卷
基金：
美国国家科学基金会;
关键词：
muonium; silicon; transition dynamics; charge cycles;
D O I：
10.1016/S0921-4526(00)00243-X
中图分类号：
O469 [凝聚态物理学];
学科分类号：
070205 ;
摘要：
Muonimn transition rates are modelled for n-type Si based on parameters obtained from previous RF-mu SR studies. We identify several different Mn charge cycles and the temperature region over which each dominates as the main source of longitudinal-field mu SR relaxation. A new three-state -/0 cycle is established as most important at the highest temperatures and a modification of the rate expression for activated capture is proposed to reconcile apparent discrepancies between relaxation data and the existing model of Mu dynamics. (C) 2000 Elsevier Science B.V. All rights reserved.
引用
收藏
页码：525 / 529
页数：5
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