Dependence of conduction type of ZnO films prepared by sputtering a Zn3As2/ZnO target on substrate temperature and thermal treatment

被引：14

作者：

Fan, J. C. ^{[1
]}

Xie, Z.

Wan, Q.

Wang, Y. G.

机构：

[1] Hunan Univ, Coll Mat Sci & Engn, Changsha 410082, Peoples R China

[2] Hunan Univ, Coll Phys & Microelect Sci, Changsha 410082, Peoples R China

[3] Hunan Univ, Micro Nano Technol Res Ctr, Changsha 410082, Peoples R China

来源：

JOURNAL OF CRYSTAL GROWTH | 2007年 / 304卷 / 02期

关键词：

arsenic dopant; thermal treatment; Zn3As2/ZnO target; p-type ZnO films;

D O I：

10.1016/j.jcrysgro.2007.02.027

中图分类号：

O7 [晶体学];

学科分类号：

0702 ; 070205 ; 0703 ; 080501 ;

摘要：

ZnO films were deposited on glass substrates by sputtering a Zn3As2/ZnO target using radio frequency (rf) magnetron sputtering. XRD was used to analyze the crystal orientation of ZnO films. Energy dispersive spectroscopy result shows that As content in ZnO:As films is nearly uniform. Room temperature Hall and resistivity measurements indicate that the substrate temperature is an important factor to determine conduction type of ZnO films and proper thermal treatment for the films may change their electrical behavior from n type to p-type. As-doped ZnO film shows p type conductivity with mobility as high as 4.07 cm(2)/V s after annealing in Ar ambient at 400 degrees C for 60 min. (c) 2007 Elsevier B.V. All rights reserved.

引用

页码：295 / 298

页数：4

共 17 条

[1]

Aoki T, 2002, PHYS STATUS SOLIDI B, V229, P911, DOI 10.1002/1521-3951(200201)229:2<911::AID-PSSB911>3.0.CO

[2]

2-R

[3] Investigation on the p-type formation mechanism of arsenic doped p-type ZnO thin film [J].

Kang, Hong Seong ;

Kim, Gun Hee ;

Kim, Dong Lim ;

Chang, Hyun Woo ;

Du Ahn, Byung ;

Lee, Sang Yeol .

APPLIED PHYSICS LETTERS, 2006, 89 (18)

[4] Doping by large-size-mismatched impurities:: The microscopic origin of arsenic- or antimony-doped p-type zinc oxide -: art. no. 155504 [J].

Limpijumnong, S ;

Zhang, SB ;

Wei, SH ;

Park, CH .

PHYSICAL REVIEW LETTERS, 2004, 92 (15) :155504-1

[5] As-doped p-type ZnO produced by an evaporation/sputtering process [J].

Look, DC ;

Renlund, GM ;

Burgener, RH ;

Sizelove, JR .

APPLIED PHYSICS LETTERS, 2004, 85 (22) :5269-5271

[6] Electrical characterization of p-type N-doped ZnO films prepared by thermal oxidation of sputtered Zn3N2 films [J].

Nakano, Y ;

Morikawa, T ;

Ohwaki, T ;

Taga, Y .

APPLIED PHYSICS LETTERS, 2006, 88 (17)

[7] Synthesis of p-type ZnO films [J].

Ryu, YR ;

Zhu, S ;

Look, DC ;

Wrobel, JM ;

Jeong, HM ;

White, HW .

JOURNAL OF CRYSTAL GROWTH, 2000, 216 (1-4) :330-334

[8] Repeated temperature modulation epitaxy for p-type doping and light-emitting diode based on ZnO [J].

Tsukazaki, A ;

Ohtomo, A ;

Onuma, T ;

Ohtani, M ;

Makino, T ;

Sumiya, M ;

Ohtani, K ;

Chichibu, SF ;

Fuke, S ;

Segawa, Y ;

Ohno, H ;

Koinuma, H ;

Kawasaki, M .

NATURE MATERIALS, 2005, 4 (01) :42-46

[9] Characterization of As-doped, p-type ZnO by x-ray absorption near-edge structure spectroscopy [J].

Vaithianathan, V ;

Lee, BT ;

Chang, CH ;

Asokan, K ;

Kim, SS .

APPLIED PHYSICS LETTERS, 2006, 88 (11)

[10] Preparation of As-doped p-type ZnO films using a Zn3As2/ZnO target with pulsed laser deposition -: art. no. 062101 [J].

Vaithianathan, V ;

Lee, BT ;

Kim, SS .

APPLIED PHYSICS LETTERS, 2005, 86 (06) :1-3

← 1 2 →