Highly stable dye-sensitized solid-state solar cell with the semiconductor 4CuBr 3S(C4H9)2 as the hole collector

被引：82

作者：

Tennakone, K ^{[1
]}

Senadeera, GKR ^{[1
]}

De Silva, DBRA ^{[1
]}

Kottegoda, IRM ^{[1
]}

机构：

[1] Inst Fundamental Studies, Kandy, Sri Lanka

来源：

APPLIED PHYSICS LETTERS | 2000年 / 77卷 / 15期

关键词：

D O I：

10.1063/1.1312858

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Construction of a dye-sensitized solid-state solar cell with the semiconductor 4CuBr 3S(C4H9)(2) as the hole collector is reported. The cell is unusually stable compared to dye-sensitized solid state cells reported previously and delivers a short-circuit photocurrent and an open-circuit voltage of similar to 4.3 mA cm(-2) and 400 mV respectively, at 1.5 air mass, 1000 W m(-2) sunlight. (C) 2000 American Institute of Physics. [S0003-6951(00)03139-9].

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页码：2367 / 2369

页数：3

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