Effect of crystallographic orientation on structural response of silicon to femtosecond laser irradiation

被引：16

作者：

Zhang, Xin ^{[1
]}

Zhang, Liang ^{[2
]}

Mironov, Sergey ^{[1
]}

Xiao, Rongshi ^{[1
]}

Guo, Liang ^{[2
]}

Huang, Ting ^{[1
]}

机构：

[1] Beijing Univ Technol, Fac Mat & Mfg, Highpower & Ultrafast Laser Mfg Lab, Beijing 100124, Peoples R China

[2] Southern Univ Sci & Technol, Dept Mech & Energy Engn, Shenzhen 518055, Guangdong, Peoples R China

来源：

APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING | 2021年 / 127卷 / 03期

关键词：

Femtosecond laser; Crystallographic orientation; Amorphization; Silicon;

D O I：

10.1007/s00339-021-04341-y

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

Femtosecond laser has been widely utilized for modification of crystal structure to achieve desired functions. So far, however, the effect of crystallographic orientation on the induced structure by femtosecond laser processing has yet been comprehensively studied. The present work is undertaken in an attempt to fill this gap in our knowledge. To this end, commercial-purity Si is used as a target material and high-resolution transmission electron microscopy as well as electron backscatter diffraction are applied to examine the irradiation-induced microstructural changes. The structural response of the pulsed material is found to be principally influenced by the crystallographic orientation of the target surface. Specifically, at the surface orientation close to {111}, a pronounced amorphization effect is observed whereas no disordered material is detected at the orientations close to {100}. This phenomenon could be explained by the lowest crystallization speed required by the (111) surface due to its smallest surface energy. Compared with nanosecond laser, non-thermal melting induced by femtosecond laser induces mild thermal gradient and favors recrystallization.

引用

页数：9

共 28 条

[21] Control of the electronic phase of a manganite by mode-selective vibrational excitation [J].

Rini, Matteo ;

Tobey, Ra'anan ;

Dean, Nicky ;

Itatani, Jiro ;

Tomioka, Yasuhide ;

Tokura, Yoshinori ;

Schoenlein, Robert W. ;

Cavalleri, Andrea .

NATURE, 2007, 449 (7158) :72-74

[22] Influence of crystal orientation on the formation of femtosecond laser-induced periodic surface structures and lattice defects accumulation [J].

Sedao, Xxx ;

Maurice, Claire ;

Garrelie, Florence ;

Colombier, Jean-Philippe ;

Reynaud, Stephanie ;

Quey, Romain ;

Pigeon, Florent .

APPLIED PHYSICS LETTERS, 2014, 104 (17)

[23] Inducing and probing non-thermal transitions in semiconductors using femtosecond laser pulses [J].

Sundaram, SK ;

Mazur, E .

NATURE MATERIALS, 2002, 1 (04) :217-224

[24] Temperature dependent ablation threshold in silicon using ultrashort laser pulses [J].

Thorstensen, Jostein ;

Foss, Sean Erik .

JOURNAL OF APPLIED PHYSICS, 2012, 112 (10)

[25] KINETICS OF HIGH-DENSITY PLASMAS GENERATED IN SI BY 1.06- AND 0.53-MU-M PICOSECOND LASER-PULSES [J].

VANDRIEL, HM .

PHYSICAL REVIEW B, 1987, 35 (15) :8166-8176

[26]

Vanselow R., 1988, CHEM PHYS SOLID SURF, DOI [10.1007/978-3-642-73902-6, DOI 10.1007/978-3-642-73902-6]

[27] Ultrafast changes in lattice symmetry probed by coherent phonons [J].

Wall, S. ;

Wegkamp, D. ;

Foglia, L. ;

Appavoo, K. ;

Nag, J. ;

Haglund, R. F., Jr. ;

Staehler, J. ;

Wolf, M. .

NATURE COMMUNICATIONS, 2012, 3

[28] ORIENTATION DEPENDENCE OF LASER AMORPHIZATION OF CRYSTAL SI [J].

YATER, JA ;

THOMPSON, MO .

PHYSICAL REVIEW LETTERS, 1989, 63 (19) :2088-2091

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