Ionic contamination of the silicon wafer from wafer cleaning process

被引：0

作者：

Omoregie, HO ^{[1
]}

Buffat, SJ ^{[1
]}

Sinha, D ^{[1
]}

机构：

[1] SCP Global Technol Inc, Boise, ID 83704 USA

来源：

CLEANING TECHNOLOGY IN SEMICONDUCTOR DEVICE MANUFACTURING VII, PROCEEDINGS | 2002年 / 2002卷 / 26期

关键词：

D O I：

暂无

中图分类号：

O646 [电化学、电解、磁化学];

学科分类号：

081704 ;

摘要：

A number of anions and selected water-soluble cations have been investigated following their deposition from sulfuric-peroxide mixture (SPM) process and subsequent removal by DI water rinsing and dilute SC1 processes. Particular attention has been. paid to sulfate anion. The objective of the current study is to, evaluate the factors affecting removal of these ions from the wafer surface following SPM process. The surface concentration of the anions and cations on the wafer surface was identified with ion-chromatography (IC). A number of observations have been made regarding rinse characteristics of these anions and cations. The information can be used to control ionic contamination and optimize RCA based cleaning process. Additional benefits include reduced water and chemical consumption, reduction of cycle time with higher wafer throughput that results into lower cost of ownership.

引用

页码：135 / 143

页数：9