Metal-insulator transition in quantum dot arrays

被引：2

作者：

Shailos, A ^{[1
]}

El Hassan, M

Prasad, C

Bird, JP

Ferry, DK

Lin, LH

Aoki, N

Nakao, K

Ochiai, Y

Ishibashi, K

Aoyagi, Y

Sugano, T

机构：

[1] Arizona State Univ, Dept Elect Engn, Tempe, AZ 85287 USA

[2] Arizona State Univ, Ctr Solid State Elect Res, Tempe, AZ 85287 USA

[3] Chiba Univ, Dept Mat Sci, Inage Ku, Chiba 2368522, Japan

[4] RIKEN, Nanoelect Mat Lab, Frontier Res Program, Wako, Saitama 3510198, Japan

来源：

SUPERLATTICES AND MICROSTRUCTURES | 2000年 / 27卷 / 5-6期

关键词：

localization; metal-insulator transition; quantum dots;

D O I：

10.1006/spmi.2000.0832

中图分类号：

O469 [凝聚态物理学];

学科分类号：

070205 ;

摘要：

We present evidence for a re-entrant metal-insulator transition that arises in quantum dot arrays as the gate voltage is used to sweep their density of states past the Fermi level. The form of the temperature variation of the conductance observed in these arrays can be accounted for using a functional form derived from studies of the metal-insulator transition in two dimensions, although the values obtained for the fit parameters suggest that the behavior we observe here may be quite distinct to that found in two dimensions. (C) 2000 Academic Press.

引用

页码：311 / 314

页数：4

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