MEASUREMENT OF THE HEIGHT OF NANORELIEF ELEMENTS BY THE METHOD OF THREE-DIMENSIONAL RECONSTRUCTION IN A SCANNING ELECTRON MICROSCOPE

被引：0
|
作者：
Darznek, S. A. [1 ]
Karabanov, D. A. [1 ]
Kuzin, A. Yu. [2 ]
Mityukhlyaev, V. B. [1 ]
Todua, P. A. [1 ,3 ]
Filippov, M. N. [1 ,3 ,4 ]
机构：
[1] Res Ctr Study Properties Surfaces & Vacuum NITsPV, Moscow, Russia
[2] All Russia Res Inst Metrol Serv VNIIMS, Moscow, Russia
[3] State Univ, Moscow Inst Phys & Technol, Dolgoprudnyi, Russia
[4] RAS, IGIC, Kurnakov Inst Gen & Inorgan Chem, Moscow, Russia
来源：
MEASUREMENT TECHNIQUES | 2017年 / 60卷 / 03期
关键词：
three-dimensional reconstruction; scanning electron microscope; relief structure; profilometer; STANDARDS;
D O I：
10.1007/s11018-017-1177-4
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
Comparative measurements of the height of the nanorelief steps of the surface of a silicon wafer by methods of three-dimensional reconstruction using a scanning electron microscope and profilometry were carried out. To realize the method of three-dimensional reconstruction, an islet gold film is formed on the surface of the test sample. The AlphaStep D-600 profiler is calibrated with a KTS-4500 QS step height gauge. The coincidence of the results of measurements with the methods of three-dimensional reconstruction and profilometry is established. The possibilities of reducing the uncertainty of the measurement results by the method of three-dimensional reconstruction were analyzed.
引用
收藏
页码：220 / 225
页数：6
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