Ultralow-fluence single-shot optical crystalline-to-amorphous phase transition in Ge-Sb-Te nanoparticles

被引：7

作者：

Casarin, Barbara ^{[1
]}

Caretta, Antonio ^{[2
]}

Chen, Bin ^{[3
]}

Kooi, Bart J. ^{[3
]}

Ciprian, Roberta ^{[2
]}

Parmigiani, Fulvio ^{[1
,2
,4
]}

Malvestuto, Marco ^{[2
]}

机构：

[1] Univ Trieste, Via A Valerio 2, I-34127 Trieste, Italy

[2] Elettra Sincrotrone Trieste SCpA, Str Statale 14 Km 163-5,AREA Sci Pk, I-34149 Trieste, Italy

[3] Univ Groningen, Zernike Inst Adv Mat, NL-9747 AG Groningen, Netherlands

[4] Univ Cologne, Int Fac, D-50937 Cologne, Germany

来源：

NANOSCALE | 2018年 / 10卷 / 35期

关键词：

STRUCTURAL TRANSITIONS; GE2SB2TE5; MEMORY; FILMS; NONVOLATILE; DISORDER; NANOWIRE; MEDIA;

D O I：

10.1039/c8nr04350g

中图分类号：

O6 [化学];

学科分类号：

0703 ;

摘要：

Here we demonstrate that the 0-dimensional confinement of Ge2Sb2Te5 results in a drastic reduction of the minimum critical fluence required for optical-induced amorphization when compared to the thin-film cases. We show that by using single-shot laser pulses, the investigated nanoparticles display a crystalline-to-amorphous transition, satisfying a mandatory requirement of a bit-memory element. These unprecedented results open a viable route to boost energy efficient phase-change processes.

引用

收藏

页码：16574 / 16580

页数：7

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