Growth of cubic and hexagonal CdTe thin films by pulsed laser deposition

被引：92

作者：

Pandey, SK

Tiwari, U

Raman, R

Prakash, C

Krishna, V

Dutta, V

Zimik, K

机构：

[1] Solid State Phys Lab, Delhi 110054, India

[2] Indian Inst Technol, Ctr Energy Studies, New Delhi 110016, India

[3] Laser Sci & Technol Ctr, Delhi 110054, India

来源：

THIN SOLID FILMS | 2005年 / 473卷 / 01期

关键词：

laser ablation; cadmium telluride; XRD; band gap;

D O I：

10.1016/j.tsf.2004.06.157

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

The paper reports the growth of cadmium telluride (CdTe) thin films by pulsed laser deposition (PLD) using excimer laser (KrF, lambda=248 nm, 10 Hz) on coming 7059 glass and SnO2-coated glass (SnO2/glass) substrates at different substrate temperatures (T-s) and at different laser energy pulses. Single crystal target CdTe was used for deposition of thin films. With 30 min deposition time, 1.8- to similar to3-mum-thick films were obtained up to 200 degreesC substrate temperature. However, the film re-evaporates from the substrate surface at temperatures >275 degreesC. Atomic force microscopy (AFM) shows an average grain size similar to0.3 mum. X-ray diffraction analysis confirms the formation of CdTe cubic phase at all pulse energies except at 200 mJ. At 200 mJ laser energy, the films show hexagonal phase. Optical properties of CdTe were also investigated and the band gap of CdTe films were found as 1.54 eV for hexagonal phase and similar to1.6 eV for cubic phase. (C) 2004 Elsevier B.V. All rights reserved.

引用

页码：54 / 57

页数：4

共 19 条

[1] STRUCTURAL PHASE-BEHAVIOR IN II-VI SEMICONDUCTOR NANOPARTICLES [J].