Vacancy defect distribution in heteroepitaxial a-plane GaN grown by hydride vapor phase epitaxy

被引：11

作者：

Tuomisto, F. ^{[1
]}

Paskova, T.

Figge, S.

Hommel, D.

Monemar, B.

机构：

[1] Helsinki Univ Technol, Phys Lab, FI-02015 Helsinki, Finland

[2] Univ Bremen, Inst Solid State Phys, D-28359 Bremen, Germany

[3] Linkoping Univ, Dept Phys & Measurement Technol, S-58183 Linkoping, Sweden

来源：

JOURNAL OF CRYSTAL GROWTH | 2007年 / 300卷 / 01期

关键词：

characterization; point defects; hydride vapor phase epitaxy; metalorganic chemical vapor deposition; nitrides; semiconducting gallium compounds;

D O I：

10.1016/j.jcrysgro.2006.11.040

中图分类号：

O7 [晶体学];

学科分类号：

0702 ; 070205 ; 0703 ; 080501 ;

摘要：

We have used positron annihilation spectroscopy to study the native vacancy distribution in a-plane heteroepitaxial GaN. We show that the Ga vacancy concentration is independent of the layer thickness in the range from 5 to 25 pm. This is strikingly different from the behavior in c-plane GaN, where the Ga vacancy concentration decreases dramatically with the distance from the GaN/sapphire interface. This difference in the native vacancy profiles is tentatively correlated with the differences in the 0 impurity and dislocation density profiles in the polar and non-polar materials. (c) 2006 Elsevier B.V. All rights reserved.

引用

页码：251 / 253

页数：3

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