Preparation of In2Se3 layers on InAs by heterovalent substitution

被引：2

作者：

Bezryadin, NN ^{[1
]}

Budanov, AV ^{[1
]}

Tatokhin, EA ^{[1
]}

Agapov, BL ^{[1
]}

Linnik, AV ^{[1
]}

机构：

[1] Voronezh State Technol Acad, Voronezh 394017, Russia

来源：

INORGANIC MATERIALS | 2000年 / 36卷 / 09期

关键词：

GaAs; Sphalerite Structure; THEED Pattern; RHEED Pattern; Heterovalent Substitution;

D O I：

10.1007/BF02758692

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

In2Se3/InAs heterojunctions prepared by heterovalent substitution via annealing in Se vapor in a quasi-closed reactor were studied by scanning electron microscopy, electron-probe x-ray microanalysis, and electron diffraction in reflection and transmission.

引用

页码：864 / 867

页数：4

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