High reflectivity airgap distributed Bragg reflectors realized by wet etching of AlInN sacrificial layers

被引:17
作者
Altoukhov, Alexei [1 ]
Levrat, Jacques [1 ]
Feltin, Eric [1 ]
Carlin, Jean-Francois [1 ]
Castiglia, Antonino [1 ]
Butte, Raphael [1 ]
Grandjean, Nicolas [1 ]
机构
[1] Ecole Polytech Fed Lausanne, Inst Quantum Elect & Photon, CH-1015 Lausanne, Switzerland
关键词
III-NITRIDE; HETEROSTRUCTURES; MICROCAVITIES; TECHNOLOGY; DIODES; MEMS;
D O I
10.1063/1.3259720
中图分类号
O59 [应用物理学];
学科分类号
摘要
The authors report on the achievement of a vertically oriented three pair airgap/GaN distributed Bragg reflector realized by controlled oxidation and wet-chemical etching of AlInN sacrificial layers. Microreflectivity measurements exhibit high peak reflectivity values of 87% around 500 nm after the oxidation process and 90% around 600 nm after the etching process ill overall good agreement with simulations. The broad stopband of airgap/GaN mirrors, about 250 nm wide. results from the strong refractive index contrast between air and GaN layers. (C) 2009 American Institute of Physics. [doi: 10.1063/1.3259720]
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页数:3
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