Excimer laser-assisted chemical process for formation of hydrophobic surface of Si (001)

被引：3
作者：
Liu, Neng [1 ]
Hassen, Walid M. [1 ]
Dubowski, Jan J. [1 ]
机构：
[1] Univ Sherbrooke, Lab Quantum Semicond & Photon Based BioNanotechno, Interdisciplinary Inst Technol Innovat 3IT, Lab Nanotechnol Nanosyst LN2,CNRS UMI 3463, Sherbrooke, PQ J1K OA5, Canada
来源：
APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING | 2014年 / 117卷 / 01期
关键词：
INP/INGAAS/INGAASP MICROSTRUCTURES; SILICON-WAFER; WETTABILITY; PHOTODISSOCIATION; PHOTOELECTRON; ROUGHNESS; GRADIENT; WATER; ARF; AIR;
D O I：
10.1007/s00339-014-8380-9
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
Silicon (Si) wettability is one of the important parameters in the development of Si-based biosensing and lab-on-chip devices. We report on UV laser induced hydrophobicity of Si (001) wafers immersed in methanol during the irradiation with an ArF excimer laser. The irradiation with 800 pulses of the laser operating at 65 mJ/cm(2) allowed to significantly increase the hydrophobicity of investigated samples as characterized by the static contact angle change from 77A degrees to 103A degrees. Owing to the irradiation with relatively low laser fluence, no measurable change in surface morphology of the irradiated samples has been observed with atomic force microscopy measurements. The nature of the hydrophobic surface of investigated samples is consistent with X-ray photoelectron spectroscopy analysis that indicates formation of Si-O-CH3 bonds on the surface of the laser-irradiated material.
引用
收藏
页码：37 / 41
页数：5
相关论文
共 30 条
[1]   Electrowetting on plasma-deposited fluorocarbon hydrophobic films for biofluid transport in microfluidics [J].
Bayiati, P. ;
Tserepi, A. ;
Petrou, P. S. ;
Kakabakos, S. E. ;
Misiakos, K. ;
Gogolides, E. .
JOURNAL OF APPLIED PHYSICS, 2007, 101 (10)
[2]   Reversible wettability changes in colloidal TiO2 nanorod thin-film coatings under selective UV laser irradiation [J].
Caputo, Gianvito ;
Nobile, Concetta ;
Kipp, Tobias ;
Blasi, Laura ;
Grillo, Vincenzo ;
Carlino, Elvio ;
Manna, Liberato ;
Cingolani, Roberto ;
Cozzoli, Pantaleo Davide ;
Athanassiou, Athanassia .
JOURNAL OF PHYSICAL CHEMISTRY C, 2008, 112 (03) :701-714
[3]   Effect of aging on wettability of silicon surfaces modified by Ar implantation [J].
Chassé, M ;
Ross, GG .
JOURNAL OF APPLIED PHYSICS, 2002, 92 (10) :5872-5877
[4]  
Chen ZC, 2011, PHYS CHEM CHEM PHYS, V13, P2350, DOI [10.1039/c0cp01794a, 10.1039/c0cp1794a]
[5]   Experimental and theoretical studies on vacuum ultraviolet absorption cross sections and photodissociation of CH3OH, CH3OD, CD3OH, and CD3OD [J].
Cheng, BM ;
Bahou, M ;
Chen, WC ;
Yui, CH ;
Lee, YP ;
Lee, LC .
JOURNAL OF CHEMICAL PHYSICS, 2002, 117 (04) :1633-1640
[6]   Past drop movements resulting from the phase change on a gradient surface [J].
Daniel, S ;
Chaudhury, MK ;
Chen, JC .
SCIENCE, 2001, 291 (5504) :633-636
[7]   ArF laser-based quantum well intermixing in InGaAs/InGaAsP heterostructures [J].
Genest, Jonathan ;
Beal, Romain ;
Aimez, Vincent ;
Dubowski, Jan J. .
APPLIED PHYSICS LETTERS, 2008, 93 (07)
[8]   INVESTIGATIONS ON HYDROPHILIC AND HYDROPHOBIC SILICON (100) WAFER SURFACES BY X-RAY PHOTOELECTRON AND HIGH-RESOLUTION ELECTRON-ENERGY LOSS-SPECTROSCOPY [J].
GRUNDNER, M ;
JACOB, H .
APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING, 1986, 39 (02) :73-82
[9]   Fabrication and characterization of ultra-water-repellent alumina-silica composite films [J].
Ishizaki, Takahiro ;
Saito, Nagahiro ;
Inoue, Yasushi ;
Bekke, Makoto ;
Takai, Osamu .
JOURNAL OF PHYSICS D-APPLIED PHYSICS, 2007, 40 (01) :192-197
[10]   Memory of silica aggregates dispersed in smectic liquid crystals:: Effect of the interface properties [J].
Jákli, A ;
Almásy, L ;
Borbély, S ;
Rosta, L .
EUROPEAN PHYSICAL JOURNAL B, 1999, 10 (03) :509-513
123