Growth and surface studies on triglycine sulpho-phosphate (TGSP) single crystals

被引:8
作者
Arunmozhi, G [1 ]
Kumar, RM
Jayavel, R
Subramanian, C
机构
[1] Anna Univ, Ctr Crystal Growth, Madras 600025, Tamil Nadu, India
[2] VRS Coll Engn & Technol, Arasur 607107, India
来源
MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY | 1997年 / 49卷 / 03期
关键词
triglycine sulpho-phosphate; optical microscopic examination; scanning electron microscope; charging effect; domains;
D O I
10.1016/S0921-5107(97)00127-X
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
Growth of triglycine sulpho-phosphate (TGSP) crystals using fabricated and as grown seeds and at three different pH values is reported. Large size crystals with wide plane perpendicular to the ferroelectric axis have been grown by adjusting the pH of the solution and by choosing c-cut seeds. Morphological changes due to pH variations have been identified. Optical microscopic examination of the freshly harvested crystal surface reveals etch pits, spirals and flat topped hillocks. A scanning electron microscope, in the secondary electron emission mode has been employed to observe the cleavage surface and domain structure on TGSP crystal without metallization of the surface. Low accelerating voltage and low probe current have been used to probe the surface to avoid the charging effect. In the absence of charging effect the domains observed are found to be static. There is no change in the domain structure due to phosphate addition. (C) 1997 Elsevier Science S.A.
引用
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页码:216 / 220
页数:5
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